CAJ | 학술논문

光谱椭偏仪被用来研究用脉冲激光沉积方法在Si(100)基片上,温度分别为400,500,600,700 ℃制备的ZnO薄膜的特性.利用三层Cauchy散射模型拟合椭偏参数,计算了每个温度下制备的ZnO薄膜在400～800 nm波长范围内的折射率(n)和消光系数(k).发现基片温度对光学常数有很大的影响.通过分析XRD表征的晶体结构和 AFM表征的薄膜表面形貌,发现折射率的变化归因于薄膜堆积密度的变化.为了获得具有较好的光学和薄膜质量的ZnO薄膜,相比与其他沉积温度600 ℃或许是最佳的沉积温度.
광보타편의피용래연구용맥충격광침적방법재Si(100)기편상,온도분별위400,500,600,700 ℃제비적ZnO박막적특성.이용삼층Cauchy산사모형의합타편삼수,계산료매개온도하제비적ZnO박막재400～800 nm파장범위내적절사솔(n)화소광계수(k).발현기편온도대광학상수유흔대적영향.통과분석XRD표정적정체결구화 AFM표정적박막표면형모,발현절사솔적변화귀인우박막퇴적밀도적변화.위료획득구유교호적광학화박막질량적ZnO박막,상비여기타침적온도600 ℃혹허시최가적침적온도.
Spectroscopic ellipsometry(SE) was employed to characterize ZnO thin films prepared by pulsed laser deposition (PLD) on Si (100) substrates at various temperature of 400, 500, 600 and 700 ℃. The refractive indices (n) and extinction coefficients (k) of the ZnO films were calculated in the spectral range of 400～800 nm for each deposition temperature by fitting the ellipsometic parameters based on a three-layers dispersion with Cauchy model. It was found that the optical constants were significantly affected by the substrate temperature. Through analyzing the crystalline structures and surface morphologies of ZnO thin films grown at different substrate temperature by XRD and atomic force microscopy (AFM), respectively, the variation of the refractive index can be attributed to the changes of the packing density of the thin film. After comparing the results obtained at different grown temperature, it was suggested 600 ℃ might be the optimum deposition temperature for growing dense ZnO films with high optical and crystalline quality.