CAJ | 학술논문

利用感应耦合等离子体(ICP)进行了InSb刻蚀研究.为了实现高的刻蚀速率同时保证光滑的刻蚀表面,研究中在CH4/H2/Ar气氛中引入了Cl2.研究发现,对InSb的刻蚀速率随Cl2含量及ICP功率的升高而线性增加.当Cl2含量增加到超过12％或ICP功率大于900W时,刻蚀表面变得粗糙,而易引起刻蚀损伤的直流偏压随ICP功率的升高而降低.此现象归因于刻蚀副产物InCl3在样品表面的聚集进而妨碍均匀刻蚀反应所致.当样品温度从20℃提高到120℃,刻蚀速率及表面粗糙度无明显变化.通过试验研究,实现了对InSb的高速率、高垂直度刻蚀,刻蚀速率大于500 nm/min,对SiO2掩模刻蚀选择比大于6,刻蚀表面光洁,刻蚀垂直度可达80°.
이용감응우합등리자체(ICP)진행료InSb각식연구.위료실현고적각식속솔동시보증광활적각식표면,연구중재CH4/H2/Ar기분중인입료Cl2.연구발현,대InSb적각식속솔수Cl2함량급ICP공솔적승고이선성증가.당Cl2함량증가도초과12％혹ICP공솔대우900W시,각식표면변득조조,이역인기각식손상적직류편압수ICP공솔적승고이강저.차현상귀인우각식부산물InCl3재양품표면적취집진이방애균균각식반응소치.당양품온도종20℃제고도120℃,각식속솔급표면조조도무명현변화.통과시험연구,실현료대InSb적고속솔、고수직도각식,각식속솔대우500 nm/min,대SiO2엄모각식선택비대우6,각식표면광길,각식수직도가체80°.
A parametric study of the etching of InSb was performed in high density plasma (HDP) using inductively coupled plasma(ICP) system.To obtain high etch rate of InSb with smooth surface,Cl2 gas was introduced to the CH4/H2/Ar gas mixture.The etch rate of InSb increased linearly with the Cl2 content and the ICP power.However,the etched surface became roughened with the Cl2 content exceeding 12％ or the ICP power higher than 900 W.The roughened surfaces with higher Cl2 content or higher ICP power were both attributed to the local accumulation of the by-product InCl3 which prohibited the uniform etching.Substrate temperature ranging from 20 ℃ to 120 ℃ had almost no effect on the etch rate and the etched surface roughness.InSb to SiO2 selectivity during the ICP etching was higher than 6 and increased with the ICP power.With ICP etching condition optimized in the investigated range,etch rate of exceeding 500 nm/min with smooth etched surface and sidewall angles of about 80° were obtained.