CAJ | 학술논문

采用一维传递矩阵法模拟计算了AlGaN/GaN/InGaN对称分别限制多量子阱激光器(发射波长为396.6nm)的波导特性.以光限制因子、阈值电流密度和功率效率作为优化参量,获得激光器的优化结构参数为:3周期量子阱In0.02Ga0.98N/In0.15Ga0.85N(10.5nm/3.5nm)作为有源层,90nm In0.1Ga0.9N为波导层,120周期Al0.25Ga0.75N/GaN(2.5nm/2.5nm)为限制层.
채용일유전체구진법모의계산료AlGaN/GaN/InGaN대칭분별한제다양자정격광기(발사파장위396.6nm)적파도특성.이광한제인자、역치전류밀도화공솔효솔작위우화삼량,획득격광기적우화결구삼수위:3주기양자정In0.02Ga0.98N/In0.15Ga0.85N(10.5nm/3.5nm)작위유원층,90nm In0.1Ga0.9N위파도층,120주기Al0.25Ga0.75N/GaN(2.5nm/2.5nm)위한제층.
Waveguide characteristics of symmetrical separate confinement heterojunction multi-quantum well (SCH-MQW) AlGaN/GaN/InGaN laser diode (LD) are studied by using one dimensional (1-D) transfer-matrix waveguide approach.Aiming at photon confinement factor,threshold current,and power efficiency,layers design for SCH-MQW LD is optimized.The optimal layers parameters are 3 periods In0.02Ga0.98N/In0.15Ga0.85N QW for active layer,In0.1Ga0.9N for waveguide layer with 90nm thick,and 120×(2.5nm/2.5nm) Al0.25Ga0.75N/GaN supper lattices for cladding layer with the laser wavelength of 396.6nm.