CAJ | 학술논문

采用固态磷源分子束外延技术在InP(100)衬底上生长了高质量的InP外延材料.实验结果表明InP/InP外延材料的电学性质与诸多生长参数密切相关.根据霍耳测量结果,对生长条件和实验参数进行了优化,在生长温度为370℃,磷裂解温度为850℃,生长速率为0.791μm/h和束流比为2.5的条件下,获得了厚度为2.35μm的InP/InP外延材料.在77K温度下,电子浓度为1.55×1015cm-3,电子迁移率达到4.57×104cm2/(V·s).
채용고태린원분자속외연기술재InP(100)츤저상생장료고질량적InP외연재료.실험결과표명InP/InP외연재료적전학성질여제다생장삼수밀절상관.근거곽이측량결과,대생장조건화실험삼수진행료우화,재생장온도위370℃,린렬해온도위850℃,생장속솔위0.791μm/h화속류비위2.5적조건하,획득료후도위2.35μm적InP/InP외연재료.재77K온도하,전자농도위1.55×1015cm-3,전자천이솔체도4.57×104cm2/(V·s).
The molecular beam epitaxial growth of high quality epilayers on (100) InP substrate using a valve phosphorous cracker cell over a wide range of P/In BEP ratio (2.0～7.0) and growth rate (0. 437 and 0. 791μm/h). Experimental results show that electrical properties exhibit a pronounced dependence on growth parameters, which are growth rate, P/In BEP ratio, cracker zone temperature, and growth temperature. The parameters have been optimized and electron concentration of 1.55 × 1015 cm-3 have been achieved with an epilayer thickness of 2.35μtm at a growth temperature of 370℃ by using a cracking zone temperature of 850℃.