CAJ | 학술논문

基于物理原理的分析,提出了GaAs PIN二极管的一种新等效电路模型.GaAs PIN二极管被分成P+n-结、基区和n-n+结三部分分别建模,总的模型由三个子模型组成,从而极大地提高了模型的准确性.相应的模型参数提取过程不要求苛刻的实验或测试条件,简便易操作.研制了15组GaAs PIN二极管来验证模型,测试结果表明模型准确地反映了GaAs PIN二极管的正向和反向特性.
기우물리원리적분석,제출료GaAs PIN이겁관적일충신등효전로모형.GaAs PIN이겁관피분성P+n-결、기구화n-n+결삼부분분별건모,총적모형유삼개자모형조성,종이겁대지제고료모형적준학성.상응적모형삼수제취과정불요구가각적실험혹측시조건,간편역조작.연제료15조GaAs PIN이겁관래험증모형,측시결과표명모형준학지반영료GaAs PIN이겁관적정향화반향특성.
A novel equivalent circuit model for a GaAs PIN diode is presented based on physical analysis. The diode is divided into three parts., the p+ n- junction, the I-layer, and the n- n+ junction, which are modeled separately. The entire model is then formed by combining the three sub-models. In this way, the model's accuracy is greatly enhanced. Furthermore, the corresponding parameter extraction method is easy, requiring no rigorous experiment or measurement. To validate this newly proposed model, fifteen groups of diodes are fabricated. Measurement shows that the model exactly represents behavior of GaAs PIN diodes under both forward and reversely biased conditions.