计算物理
計算物理
계산물리
CHINESE JOURNAL OF COMPUTATIONAL PHYSICS
2011年
2期
306-312
,共7页
4H-SiC PiN二极管%结终端扩展%仿真%工艺%击穿电压
4H-SiC PiN二極管%結終耑擴展%倣真%工藝%擊穿電壓
4H-SiC PiN이겁관%결종단확전%방진%공예%격천전압
4H-SiC PiN diode%JTE%simulation%process%breakdown voltage
利用二维器件模拟软件ISE-TCAD 10.0,对结终端采用结扩展保护技术的4H-SiC PiN二极管平面器件进行反向耐压特性的模拟,并获得许多有价值的模拟数据.依据所得的模拟数据进行此种二极管器件的研制.实验测试表明,此二极管的模拟优化数据与实验测试的结果一致性较好,4H-SiC PiN二极管所测得到的反向电压达1 600 V,该反向耐压数值达到理想平面结的击穿耐压90%以上.
利用二維器件模擬軟件ISE-TCAD 10.0,對結終耑採用結擴展保護技術的4H-SiC PiN二極管平麵器件進行反嚮耐壓特性的模擬,併穫得許多有價值的模擬數據.依據所得的模擬數據進行此種二極管器件的研製.實驗測試錶明,此二極管的模擬優化數據與實驗測試的結果一緻性較好,4H-SiC PiN二極管所測得到的反嚮電壓達1 600 V,該反嚮耐壓數值達到理想平麵結的擊穿耐壓90%以上.
이용이유기건모의연건ISE-TCAD 10.0,대결종단채용결확전보호기술적4H-SiC PiN이겁관평면기건진행반향내압특성적모의,병획득허다유개치적모의수거.의거소득적모의수거진행차충이겁관기건적연제.실험측시표명,차이겁관적모의우화수거여실험측시적결과일치성교호,4H-SiC PiN이겁관소측득도적반향전압체1 600 V,해반향내압수치체도이상평면결적격천내압90%이상.
Reverse voltage characterizations of 4H-SiC PiN diodes with junction termination extension (JTE) are simulated by using a two-dimensional device simulator (ISE-TCAD 10). 0.4H-SiC PiN diodes with JTE are fabricated with a planar fabrication process based on simulation. Good consistency between simulation and experiments was achieved. It shows that a 4H-SiC PiN diode with optimized JTE edge termination can reach a breakdown voltage of 1 600 V, which is more than 90percent of ideal parallel plane junction breakdown voltage.
