CAJ | 학술논문

利用气态源分子束外延,采用相对较高的1.1%μm~(-1)失配度变化速率,在InAlAs递变缓冲层上生长了晶格失配度高达2.6%的InP基InGaAs变形晶格探测器结构,并与采用相同结构而晶格失配度为1.7%和2.1%的探测器样品进行了比较.通过原子力显微镜、X射线衍射、光致发光和器件特性测试对样品进行了表征.结果显示该晶格失配度达2.6%的探测器结构具有较好的表面形貌、较大的晶格弛豫度和理想的光学特性.器件室温截止波长约为2.9μm,直径为300μm的器件室温下在反向偏压10mV时的暗电流为2.56μA.
이용기태원분자속외연,채용상대교고적1.1%μm~(-1)실배도변화속솔,재InAlAs체변완충층상생장료정격실배도고체2.6%적InP기InGaAs변형정격탐측기결구,병여채용상동결구이정격실배도위1.7%화2.1%적탐측기양품진행료비교.통과원자력현미경、X사선연사、광치발광화기건특성측시대양품진행료표정.결과현시해정격실배도체2.6%적탐측기결구구유교호적표면형모、교대적정격이예도화이상적광학특성.기건실온절지파장약위2.9μm,직경위300μm적기건실온하재반향편압10mV시적암전류위2.56μA.
InP-based metamorphic InGaAs photodetector structures with lattice mismatch up to 2.6% were grown on InAlAs graded buffers with a relatively high mismatch grading rate of 1.1%μm~(-1) by gas source molecular beam epitaxy.They were compared to the samples with the same structures but smaller lattice mismatch of 1.7% and 2.1% to the InP substrate.Characteristics of the wafers were investigated by the measurements of atomic force microscopy,x-ray diffraction,photoluminescence and device performances.Results show that moderate surface morphology,large degree of relaxation and feasible optical characteristics have been obtained for the photodetector structures with lattice mismatch of 2.6%.The cut-off wavelength of the device is about 2.9μm at room temperature.The typical dark current of 2.56μA at room temperature has been achieved at reverse bias of 10 mV for the photodetector with 300 μm diameter.