CAJ | 학술논문

在Si和外延层之间使用一层薄金属层作为高效反射镜的所谓"镜面衬底",不但有助于提高芯片的出光效率,同时把键合温度降低到300℃以下.利用Au/In合金的方法,来实现用于高亮LED的Si片与AlGaInP四元外延片的键合.实验表明,在温度为250℃时,利用Au/In作为焊料,Si片与AlGaInP四元外延片可以实现比较好的键合,键合面可以达到60%.通过研磨减薄、X-ray测试和扫描电镜(SEM)测试得出键合面的界面特性,通过能谱分析得出键合面的物质分别为AuIn2和AuIn,实验测试得出此时Au的原子数占33.31%,In的原子数占36.64%.
재Si화외연층지간사용일층박금속층작위고효반사경적소위"경면츤저",불단유조우제고심편적출광효솔,동시파건합온도강저도300℃이하.이용Au/In합금적방법,래실현용우고량LED적Si편여AlGaInP사원외연편적건합.실험표명,재온도위250℃시,이용Au/In작위한료,Si편여AlGaInP사원외연편가이실현비교호적건합,건합면가이체도60%.통과연마감박、X-ray측시화소묘전경(SEM)측시득출건합면적계면특성,통과능보분석득출건합면적물질분별위AuIn2화AuIn,실험측시득출차시Au적원자수점33.31%,In적원자수점36.64%.
Using a thin metal layer as a highly efficient reflector of so-called"mirror substrate"between the Si and the epitaxial layer,it can improve the efficiency of the chip out of light,and the bonding temperature can be dropped to below 300℃.By Au/In alloy method,the experiment on Si-AlGaInP bonding was carried out.,The result shows that at the temperature around 250℃ to 300℃,using Au/In as a solder,Si wafer with the AlGaInP wafer can realize a better bonding,the bonding area reaches to 60%.Via thinning by grinding,the bonding interface properties aye given from the measurement of X-ray and scanning electron microscopy (SEM).From energy spectrum analysis,the bonding interface elements are obtained as AuIn2 and AuIn,and the experimental tests show that the atomic number of Au occupies 33.31%,while the atomic number of In is 36.64%