物理学报
物理學報
물이학보
2001年
5期
990-993
,共4页
时东霞%巴德纯%庞世瑾%宋延林%高鸿钧
時東霞%巴德純%龐世瑾%宋延林%高鴻鈞
시동하%파덕순%방세근%송연림%고홍균
p-nitrobenzonitrile (PNBN)%扫描隧道显微镜(STM)%结构转变
p-nitrobenzonitrile (PNBN)%掃描隧道顯微鏡(STM)%結構轉變
p-nitrobenzonitrile (PNBN)%소묘수도현미경(STM)%결구전변
采用真空热蒸发方法制备了有机单体薄膜对硝基苯腈p-nitrobenzonitrile (PNBN).利用 扫描隧道显微镜(STM)在PNBN薄膜上进行信息记录点的写入，通过在STM针尖和高定向裂解石 墨(HOPG)之间施加电压脉冲，直接观察到了信息记录点写入前后薄膜发生的局域结构转变. 信息记录点的写入机制主要是这种纳米范围结构变化所导致的薄膜由高阻态向低阻态转变， 高阻态对应0，低阻态对应1.
採用真空熱蒸髮方法製備瞭有機單體薄膜對硝基苯腈p-nitrobenzonitrile (PNBN).利用 掃描隧道顯微鏡(STM)在PNBN薄膜上進行信息記錄點的寫入，通過在STM針尖和高定嚮裂解石 墨(HOPG)之間施加電壓脈遲，直接觀察到瞭信息記錄點寫入前後薄膜髮生的跼域結構轉變. 信息記錄點的寫入機製主要是這種納米範圍結構變化所導緻的薄膜由高阻態嚮低阻態轉變， 高阻態對應0，低阻態對應1.
채용진공열증발방법제비료유궤단체박막대초기분정p-nitrobenzonitrile (PNBN).이용 소묘수도현미경(STM)재PNBN박막상진행신식기록점적사입，통과재STM침첨화고정향렬해석 묵(HOPG)지간시가전압맥충，직접관찰도료신식기록점사입전후박막발생적국역결구전변. 신식기록점적사입궤제주요시저충납미범위결구변화소도치적박막유고조태향저조태전변， 고조태대응0，저조태대응1.
Nanometer scale data recording has been achieved on p-nitrobenzonitrile thin fi lms using scanning tunneling microscopy.When a series of voltage pulse is applied between the STM tip and the highly ordered pyrolytic graphite substrate , structural transition at molecular scale has been observed directly for PNBN thin films.The recording mechanism is attributed to local structural trans ition at molecular scale,i.e.,from a crystalline state to a disordered one.The former corresponds to a high electrical resistance,and the latter to a low resistance.
