CAJ | 학술논문

采用一种新方法对InGaAs/InP复合沟道高电子迁移率晶体管进行了模拟.该方法通过流体力学模型和密度梯度模型的联合求解,得到了沟道内的电子密度分布.与一些传统方法相比,该方法收敛性更好,速度更快,且同样适用于其他类型高电子迁移率晶体管器件的模拟.利用仿真对InGaAs/InP复合沟道高电子迁移率晶体管进行了深入研究.
채용일충신방법대InGaAs/InP복합구도고전자천이솔정체관진행료모의.해방법통과류체역학모형화밀도제도모형적연합구해,득도료구도내적전자밀도분포.여일사전통방법상비,해방법수렴성경호,속도경쾌,차동양괄용우기타류형고전자천이솔정체관기건적모의.이용방진대InGaAs/InP복합구도고전자천이솔정체관진행료심입연구.
A new method is used to simulate InGaAs/InP composite channel high electron mobility transistors (HEMTs).By coupling the hydrodynamic model and the density gradient model,the electron density distribution in the channel in different electric fields is obtained.This method is faster and more robust than traditional methods and should be applicable to other types of HEMTs simulations.A detailed study of the InGaAs/InP composite channel HEMTs is presented with the help of simulations.