CAJ | 학술논문

采用GaAs标准MMIC工艺制作了具有片上RC并联稳定网络的InGaP/GaAs HBT微波功率管单胞.依据K稳定因子,RC网络使功率管在较宽的频带内具有绝对稳定特性.Load-pull测试表明RC网络没有严重影响功率管的大信号特性,在5.4GHz饱和输出功率为30dBm,在11GHz 1dB压缩点输出功率大于21.6dBm.功率合成电路验证了该功率管具有高稳定性,非常适合制作微波大功率HBT放大器.
채용GaAs표준MMIC공예제작료구유편상RC병련은정망락적InGaP/GaAs HBT미파공솔관단포.의거K은정인자,RC망락사공솔관재교관적빈대내구유절대은정특성.Load-pull측시표명RC망락몰유엄중영향공솔관적대신호특성,재5.4GHz포화수출공솔위30dBm,재11GHz 1dB압축점수출공솔대우21.6dBm.공솔합성전로험증료해공솔관구유고은정성,비상괄합제작미파대공솔HBT방대기.
An InGaP/GaAs HBT microwave power transistor with on-chip parallel RC stabilization network is developed with a standard GaAs MMIC process.From the stability factor K,the device shows unconditional stability in a wide frequency range due to the RC network.The power characteristics of the device as measured by a load-pull system show that the large-signal performance of the power transistor is affected slightly by the RC network.Psat is 30dBm at 5.4GHz,and P1dB is larger than 21.6dBm at 11GHz.The stability of the device due to RC network is proved by a power combination circuit.This makes the power transistor very suitable for applications in microwave high power HBT amplifiers.