CAJ | 학술논문

利用等离子体MOCVD设备在(001)蓝宝石上生长了ZnO薄膜。通过对在不同条件下生长的薄膜样品X射线衍射的测量和分析，优化了薄膜的生长条件，长出了半高宽仅为0.15°的单一取向的高质量ZnO薄膜，并发现生长过程中多次退火或掺氮在薄膜中引入了张应力，而生长结束后一次退火却引入了压应力。
이용등리자체MOCVD설비재(001)람보석상생장료ZnO박막。통과대재불동조건하생장적박막양품X사선연사적측량화분석，우화료박막적생장조건，장출료반고관부위0.15°적단일취향적고질량ZnO박막，병발현생장과정중다차퇴화혹참담재박막중인입료장응력，이생장결속후일차퇴화각인입료압응력。
ZnO films are grown on (001) sapphire substrate by plasma-assisted MOCVD. After investigation and analysis of the samples by XRD, the growing and annealing parameters are optimized and high-quality ZnO film with 0.15° FWHM is obtained. Moreover, it is found that there is tensile stress in the samples doped with nitrogen or resulting from annealing for many times during the growing process, while compressive stress will occur in the samples annealing for only once after growth.