CAJ | 학술논문

为研制ZnSe基蓝绿色半导体激光器,必须能够对组成激光器的各单元材料实现精确控制生长,包括材料的晶体质量、掺杂浓度和生长速度等。ZnSe是制备蓝绿激光器的基础材料,本文报道利用MBE技术对ZnSe 材料进行生长控制和掺杂控制的初步研究结果。
위연제ZnSe기람록색반도체격광기,필수능구대조성격광기적각단원재료실현정학공제생장,포괄재료적정체질량、참잡농도화생장속도등。ZnSe시제비람록격광기적기출재료,본문보도이용MBE기술대ZnSe 재료진행생장공제화참잡공제적초보연구결과。
It is compulsory to realize the accurate control of the growth process of each material layer before a ZnSe-based laser diode could be fabricated, such as crystal quality control, doping level control and growth rate control. ZnSe is the fundamental material for blue/green laser diodes. Reported here are the primary results of an attempt on the crystal quality control, the doping level control and the growth rate control of ZnSe by MBE technology.