中国光学快报(英文版)
中國光學快報(英文版)
중국광학쾌보(영문판)
CHINESE JOURNAL OF LASERS
2003年
12期
716-718
,共3页
顾四朋%侯立松%赵启涛%黄瑞安
顧四朋%侯立鬆%趙啟濤%黃瑞安
고사붕%후립송%조계도%황서안
To improve the optical storage performance, Sn was doped into Ge2Sb2Te5 phase change thin films. The optical and thermal properties of Sn-doped Ge2Sb2Te5 film were investigated. The crystal structures of the as-sputtered and the annealed films were identified by the X-ray diffraction (XRD) method. The differential scanning calorimeter (DSC) method is used to get the crystallization temperature and crystallization energy (Ea). It was found that proper Sn-doping could highly improve storage performance of the Ge2Sb2Te5 media.
