人工晶体学报
人工晶體學報
인공정체학보
2004年
4期
629-633
,共5页
王必本%Lee Soonil%Kim Junghoi%侯碧辉
王必本%Lee Soonil%Kim Junghoi%侯碧輝
왕필본%Lee Soonil%Kim Junghoi%후벽휘
准直碳纳米管%辉光放电%负偏压
準直碳納米管%輝光放電%負偏壓
준직탄납미관%휘광방전%부편압
aligned carbon nanotubes%glow discharge%negative bias
利用负偏压增强热丝化学气相沉积在不同的负偏压和压强下,在沉积有不同厚度NiFe膜的Si衬底上制备了碳纳米管,并用扫描电子显微镜研究了它们的生长.发现在无辉光放电的情况下,碳纳米管弯曲生长,而在辉光放电时,碳纳米管准直生长,表明辉光放电对碳纳米管的准直生长起到了重要的作用.由于辉光放电的产生,在衬底表面附近形成很强的电场.相对无辉光放电时的电场,场强提高了两个数量级.本工作详细地研究了辉光放电对碳纳米管的准直生长作用.
利用負偏壓增彊熱絲化學氣相沉積在不同的負偏壓和壓彊下,在沉積有不同厚度NiFe膜的Si襯底上製備瞭碳納米管,併用掃描電子顯微鏡研究瞭它們的生長.髮現在無輝光放電的情況下,碳納米管彎麯生長,而在輝光放電時,碳納米管準直生長,錶明輝光放電對碳納米管的準直生長起到瞭重要的作用.由于輝光放電的產生,在襯底錶麵附近形成很彊的電場.相對無輝光放電時的電場,場彊提高瞭兩箇數量級.本工作詳細地研究瞭輝光放電對碳納米管的準直生長作用.
이용부편압증강열사화학기상침적재불동적부편압화압강하,재침적유불동후도NiFe막적Si츤저상제비료탄납미관,병용소묘전자현미경연구료타문적생장.발현재무휘광방전적정황하,탄납미관만곡생장,이재휘광방전시,탄납미관준직생장,표명휘광방전대탄납미관적준직생장기도료중요적작용.유우휘광방전적산생,재츤저표면부근형성흔강적전장.상대무휘광방전시적전장,장강제고료량개수량급.본공작상세지연구료휘광방전대탄납미관적준직생장작용.
Carbon nanotubes were synthesized on silicon substrates coated with NiFe films of different thickness by negative bias-enhanced hot filament chemical vapor deposition at different negative bias and pressure, and their growth was investigated by scanning electron microscopy. It was found that the bent and aligned carbon nanotubes are respectively grown without and with glow discharge, indicating that glow discharge plays an important role for alignment growth of carbon nanotubes. Due to occurrence of glow discharge, a strong electric filed is established near the substrate, where its strength relative to the field without glow discharge can be enhanced two order of the magnitude. In the work, the effect of glow discharge on alignment growth of carbon nanotubes was studied in detail.