CAJ | 학술논문

对非线性电流源Ids(Vgs,Vds)的准确描述是AlGaN/GaNHEMT大信号模型的最重要部分之一.Materka模型考虑了夹断电压与Vds的关系,其模型参数只有三个,但是Ids与Vgs的平方关系不符合实际,计算结果与测量数据有误差.我们在考虑了栅电压与漏电流的关系及不同栅压区漏电流随漏电压斜率改变的基础上,提出了改进的高电子迁移率晶体管(HEMT)的直流特性模型.采用这个模型,计算了AlGaN/GaNHEMT器件的大信号I-V特性,并与实际测量数据进行了比较.实验结果表明改进的模型更精确,Ids与Vgs的呈2.5次方的指数关系.
대비선성전류원Ids(Vgs,Vds)적준학묘술시AlGaN/GaNHEMT대신호모형적최중요부분지일.Materka모형고필료협단전압여Vds적관계,기모형삼수지유삼개,단시Ids여Vgs적평방관계불부합실제,계산결과여측량수거유오차.아문재고필료책전압여루전류적관계급불동책압구루전류수루전압사솔개변적기출상,제출료개진적고전자천이솔정체관(HEMT)적직류특성모형.채용저개모형,계산료AlGaN/GaNHEMT기건적대신호I-V특성,병여실제측량수거진행료비교.실험결과표명개진적모형경정학,Ids여Vgs적정2.5차방적지수관계.
The accurate description to the nonlinear current source Ids(Vgs,Vds) is one of the most important part of the large signal model for AlGaN/GaN HEMTs.The relationship between the pinch-off voltage and Vds has been taken into account and there are only three parameters in this model.However the square dependence of Eds on Vgs does not match HEMTs very well.The discrepancy still exists.Considering the relationship between the gate voltage and the drain current as well as the slope changes of drain current Ids with drain voltage Vds at different gate voltages region(SCD),an improved model for AlGaN/GaN high electron mobility transistors (HEMTs) has been proposed.The large signal I-V characteristics of the AlGaN/GaN HEMT device are obtained with this model.The comparison between the calculated values and the experiment measurements demonstrates that the new approach is more accurate than the Materka model to describe the pulsed DC-I-V curve.The drain current Ids depends on Vgs with an index of 2.5.