CAJ | 학술논문

万方数据

电子器件 전자기건
JOURNAL OF ELECTRON DEVICES
2008年 1期 115-116 ,共2页

马仙梅%杨小天%朱慧超%王超%高文涛%金虎%齐晓薇%高博%付国柱%荆海%马凯%常遇春%杜国同

마선매%양소천%주혜초%왕초%고문도%금호%제효미%고박%부국주%형해%마개%상우춘%두국동

氧化锌%薄膜晶体管%MOCVD 氧化鋅%薄膜晶體管%MOCVD
양화자%박막정체관%MOCVD
ZnO thin film%Thin film transistor%MOCVD

通过金属有机化学气相沉积(MOCVD)方法生长ZnO薄膜.XRD测试显示出(002)晶面的强衍射峰,表明生长的ZnO 薄膜是主度的c轴取向.基于 ZnO 薄膜基础,我们制备了 ZnO 基薄膜晶体管.
통과금속유궤화학기상침적(MOCVD)방법생장ZnO박막.XRD측시현시출(002)정면적강연사봉,표명생장적ZnO 박막시주도적c축취향.기우 ZnO 박막기출,아문제비료 ZnO 기박막정체관.
The ZnO films were deposited on the substrate of glass by MOCVD. The X-ray diffraction pat- terns of samples show sharp diffraction peaks ZnO(0 0 2),indicating that the films were highly c-axis ori-ented. Based on the ZnO film,we fabricated ZnO thin film transistor(ZnO-TFT).