CAJ | 학술논문

低噪声放大器(LNA)是高功率微波“前门”效应典型薄弱器件之一.通过SPICE效应电路建模、模拟计算和注入实验,研究了LNA在不同微波脉宽、功率参数下其增益压制效应规律.模拟结果与实验数据获得良好一致,表明基于SPICE电路模型微波效应研究方法的有效性.研究表明,LNA增益压制脉宽随注入微波脉冲脉宽的增大具有饱和效应,该饱和值基本等于LNA直流偏置电路RC时间常数,并且出现饱和现象对应注入微波脉宽拐点约为150～250 ns.最后,给出了LNA微波脉冲效应定性物理解释和机理探讨.
저조성방대기(LNA)시고공솔미파“전문”효응전형박약기건지일.통과SPICE효응전로건모、모의계산화주입실험,연구료LNA재불동미파맥관、공솔삼수하기증익압제효응규률.모의결과여실험수거획득량호일치,표명기우SPICE전로모형미파효응연구방법적유효성.연구표명,LNA증익압제맥관수주입미파맥충맥관적증대구유포화효응,해포화치기본등우LNA직류편치전로RC시간상수,병차출현포화현상대응주입미파맥관괴점약위150～250 ns.최후,급출료LNA미파맥충효응정성물리해석화궤리탐토.
This paper studies low noise amplifier (LNA) failures under intentional electromagnetic environment (IEME) through SPICE simulation and direct injection experiment.The classic single-stage studied has strong gain suppression effects when superimposed with high-power microwave (HPM) pulse at input port.Both theoretical and experimental results obtained highlight that the SPICE model can be used to assess IEMI effects.The LNA gain-suppression duration will keep the maximum value when the injected microwave pulse width exceeds its threshold for fixed pulse power level.The duration can be well estimated by the RC constant of transistor base bias circuit.Finally,the mechanism of such LNA failure is discussed.