CAJ | 학술논문

对90nm pMOSFETs在不同温度及栅压应力下的NBTI效应进行了研究,从而提出了90nm pMOSFETs NBTI退化对时间t、温度T及栅压应力Vg的模型.时间模型及温度模型与过去研究所提出的模型相似,但是关键参数有所改变.栅压应力模型遵循双对数关系,这与传统的单对数栅压应力模型不同.将较低的栅压应力也考虑在内时,双对数栅压应力模型较单对数栅压应力模型更为准确.
대90nm pMOSFETs재불동온도급책압응력하적NBTI효응진행료연구,종이제출료90nm pMOSFETs NBTI퇴화대시간t、온도T급책압응력Vg적모형.시간모형급온도모형여과거연구소제출적모형상사,단시관건삼수유소개변.책압응력모형준순쌍대수관계,저여전통적단대수책압응력모형불동.장교저적책압응력야고필재내시,쌍대수책압응력모형교단대수책압응력모형경위준학.
We investigate the negative bias temperature instability(NBTI)of 90nm pMOSFETs under various temperatures and stress gate voltages(Vg).We also study models of the time(t),temperature(T),and stress Vg dependence of 90nm pMOSFETs NBTI degradation.The time model and temperature model are similar to previous studies,with small difference in the key coefficients.A power-law model is found to hold for Vg,which is different from the conventional exponential Vg model.The new model is more predictive than the exponential model when taking lower stress Vg into account.