半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2008年
8期
1441-1444
,共4页
功率放大器%MMIC%HBT
功率放大器%MMIC%HBT
공솔방대기%MMIC%HBT
power amplifier%MMTC%HBT
介绍了一款应用于3GHz通信的基于改进增益平坦度的功率放大器设计,其由商用InGaP/GaAs异质结双极性晶体管(HBT)工艺制作.为了以简单方式改善增益平坦度,除了耦合旁路电容以及射频扼流圈外,在实际电路中没有加入额外部件.其测量线性增益为23dB,大信号增益平坦度为±0.25dB,非常贴近仿真和日标值.此两级功放400MHz带宽下的输出线性功率为31dBm,增益附加效率为44%.本电路通过良好的失真补偿电路和扼流圈模型的使用,成功地改善了增益平坦度.
介紹瞭一款應用于3GHz通信的基于改進增益平坦度的功率放大器設計,其由商用InGaP/GaAs異質結雙極性晶體管(HBT)工藝製作.為瞭以簡單方式改善增益平坦度,除瞭耦閤徬路電容以及射頻扼流圈外,在實際電路中沒有加入額外部件.其測量線性增益為23dB,大信號增益平坦度為±0.25dB,非常貼近倣真和日標值.此兩級功放400MHz帶寬下的輸齣線性功率為31dBm,增益附加效率為44%.本電路通過良好的失真補償電路和扼流圈模型的使用,成功地改善瞭增益平坦度.
개소료일관응용우3GHz통신적기우개진증익평탄도적공솔방대기설계,기유상용InGaP/GaAs이질결쌍겁성정체관(HBT)공예제작.위료이간단방식개선증익평탄도,제료우합방로전용이급사빈액류권외,재실제전로중몰유가입액외부건.기측량선성증익위23dB,대신호증익평탄도위±0.25dB,비상첩근방진화일표치.차량급공방400MHz대관하적수출선성공솔위31dBm,증익부가효솔위44%.본전로통과량호적실진보상전로화액류권모형적사용,성공지개선료증익평탄도.
A monolithic power amplifier designed for 3GHz communication applications with improved gain flatness is studied based on InGaP/GaAs hetero-junction bipolar transistor technology in a commercial foundry.To improve gain flatness in a simple way,no external component was used in the real circuit except the decoupled bypass capacitors and RF choke.The measured linear gain is 23dB with gain flatness of±0.25dB,satisfying the design goal and matching well with simulation results.This 2cstage power amplifier can deliver 31dBm linear output power and 44%power-added efficiency in the 400MHz bandwidth.The successful design with improved gain flatness is the result of superior distortion compensation and a coil model used as the RF choke.