AlGaN/GaN高电子迁移率晶体管小信号等效电路的参数提取
AlGaN/GaN고전자천이솔정체관소신호등효전로적삼수제취
Parameter Extraction for Small Signal Equivalent Circuit of AlGaN/GaN High Electron Mobility Transistors
  • 万方数据
    电子器件 전자기건
    JOURNAL OF ELECTRON DEVICES
    2007年 1期 49-53 ,共5页

    常远程%张义门%张玉明%王超%曹全君

    상원정%장의문%장옥명%왕초%조전군

    AlGaN/GaN HEMTs%小信号%参数提取 AlGaN/GaN HEMTs%小信號%參數提取
    AlGaN/GaN HEMTs%소신호%삼수제취
    AlGaN/GaN HEMTs%small signal%parameter extraction
    本文在高电子迁移率晶体管(HEMT)小信号等效电路模型的基础上,考虑了AlGaN/GaN HEMT的结构特性,具体分析了寄生参数和本征参数的提取方法.采用这些方法,实际测量了5～10 GHz频率下HEMT器件的小信号S参数并提取了它的电学参数,S参数的计算值与实际测量值进行了比较.实验结果表明此方法简单易行,较为精确.
    본문재고전자천이솔정체관(HEMT)소신호등효전로모형적기출상,고필료AlGaN/GaN HEMT적결구특성,구체분석료기생삼수화본정삼수적제취방법.채용저사방법,실제측량료5～10 GHz빈솔하HEMT기건적소신호S삼수병제취료타적전학삼수,S삼수적계산치여실제측량치진행료비교.실험결과표명차방법간단역행,교위정학.
    Considering the peculiarities of AlGaN/GaN high electron mobility transistors (HEMTs), a model of extracting parasitic and intrinsic parameters for HEMT's small signal equivalent circuit is presented. The electrical parameters and S-parameters at 5～10 GHz for the AlGaN/GaN HEMT device have been extracted with this model. The calculated S-parameters match the measured data well. It is indicated that this model is simple and feasible.
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