CAJ | 학술논문

对NPN双极晶体管进行了低剂剂率下不同偏置条件的电离辐射实验.结果表明,不同偏置条件下的低剂量率辐射损伤具有明显差异.基一射结反向偏置时,其过剩基极电流最大,电流增益衰减最为显著.而基射结正向偏置时,过剩基极电流和电流增益衰减郜最小.讨论了出现这种结果的内在机制.
대NPN쌍겁정체관진행료저제제솔하불동편치조건적전리복사실험.결과표명,불동편치조건하적저제량솔복사손상구유명현차이.기일사결반향편치시,기과잉기겁전류최대,전류증익쇠감최위현저.이기사결정향편치시,과잉기겁전류화전류증익쇠감고최소.토론료출현저충결과적내재궤제.
At low dose rate,ionizing radiation response of NPN bipolar transistors at different base-emitter junction bias,I.e,negative bias,positive bias and zero bias,was investigated in this paper. Under low dose rate irradiation of up to 1 kGy by 60Co γ-rays,the NPN bipolar transistors at different bias behaved differently. An NPN bipolar transistor in irradiation with negative biased at the base-emitter junction,the excess base current and gain degradation were much larger than those of the other two bias situations,and the excess base current and gain degradation were minimal when the base-emitter junction was positively biased. Possible mechanism was discussed.