CAJ | 학술논문

栅氧化层变薄的趋势使得栅氧化层制程对IC产品可靠性的影响成为业界关注的焦点之一.在0.18 μm工艺的基础上,针对6 V器件对应的氧化层,设计了两种不同的栅氧化层生长方式,并对这两种方法生长的栅氧化层进行了电压扫描的可靠性测试验证,并结合失效分析的结果对氧化层质量进行了分析.实验结果表明,将湿氧法(WGO)与高温氧化物沉积(HTO)工艺相结合,极大地提高了栅氧化层厚度的均匀性,增强了产品可靠性.
책양화층변박적추세사득책양화층제정대IC산품가고성적영향성위업계관주적초점지일.재0.18 μm공예적기출상,침대6 V기건대응적양화층,설계료량충불동적책양화층생장방식,병대저량충방법생장적책양화층진행료전압소묘적가고성측시험증,병결합실효분석적결과대양화층질량진행료분석.실험결과표명,장습양법(WGO)여고온양화물침적(HTO)공예상결합,겁대지제고료책양화층후도적균균성,증강료산품가고성.
The effect of gate oxide process on the reliability of ICs becomes a major concern as the gate oxide is becoming thinner. Based on 0.18 μm technology and a 6 V operation voltage device, two different kinds of gate oxide processes were designed. The voltage ramp reliability tests were performed on the two different kinds of gate oxide, and failure analysis was executed to analyze the quality of gate oxide. The experiment results show that the process, which combined wet gate oxide and high temperature oxide, would greatly improve gate oxide thickness uniformity and enhance reliability of products.