半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2008年
7期
1263-1267
,共5页
n-MOSFET%热载流子效应%1/fγ噪声
n-MOSFET%熱載流子效應%1/fγ譟聲
n-MOSFET%열재류자효응%1/fγ조성
n-MOSFET%hot carrier%1/fγ noise
研究了DC应力n.MOSFET热载流子退化的Sfγ噪声参量.提出了用噪声参数和Sfγ表征高、中、低三种栅应力下n-MOSFET抗热载流子损伤能力的方法.进行了高、中、低三种栅压DC应力下热载流子退化实验.实验结果和本文模型符合较好.
研究瞭DC應力n.MOSFET熱載流子退化的Sfγ譟聲參量.提齣瞭用譟聲參數和Sfγ錶徵高、中、低三種柵應力下n-MOSFET抗熱載流子損傷能力的方法.進行瞭高、中、低三種柵壓DC應力下熱載流子退化實驗.實驗結果和本文模型符閤較好.
연구료DC응력n.MOSFET열재류자퇴화적Sfγ조성삼량.제출료용조성삼수화Sfγ표정고、중、저삼충책응력하n-MOSFET항열재류자손상능력적방법.진행료고、중、저삼충책압DC응력하열재류자퇴화실험.실험결과화본문모형부합교호.
The 1/fr noise characteristic parameter Sfγ model in an n-MOSFET under DC hot carrier stress is studied. A method characterizing the MOSFET abilities of an anti-hot carrier with noise parameter Sfγ is presented. The hot carrier degradation effect of n-MOSFET in high-, mid-,and low gate stresses and its 1/fγ noise feature are studied. Experimental results agree well with the developed model.
