半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2003年
5期
449-453
,共5页
宁瑾%刘忠立%刘焕章%葛永才
寧瑾%劉忠立%劉煥章%葛永纔
저근%류충립%류환장%갈영재
硅基电容式微传声器%氧化多孔硅%牺牲层
硅基電容式微傳聲器%氧化多孔硅%犧牲層
규기전용식미전성기%양화다공규%희생층
silicon condenser microphone%oxidized porous silicon%sacrificial layer
提出了一种新的工艺方法制备硅基电容式微传声器.用氧化多孔硅作牺牲层制备空气隙,用约15μm厚的浓硼掺杂硅作为微传声器的刚性背极板.采用该方法制备的微传声器,在500Hz至11kHz的工作频率下,灵敏度范围为-55dB(1.78mV/Pa)到-45dB(5.6mV/Pa),随着频率的升高,灵敏度呈上升趋势,截止频率超过20kHz.
提齣瞭一種新的工藝方法製備硅基電容式微傳聲器.用氧化多孔硅作犧牲層製備空氣隙,用約15μm厚的濃硼摻雜硅作為微傳聲器的剛性揹極闆.採用該方法製備的微傳聲器,在500Hz至11kHz的工作頻率下,靈敏度範圍為-55dB(1.78mV/Pa)到-45dB(5.6mV/Pa),隨著頻率的升高,靈敏度呈上升趨勢,截止頻率超過20kHz.
제출료일충신적공예방법제비규기전용식미전성기.용양화다공규작희생층제비공기극,용약15μm후적농붕참잡규작위미전성기적강성배겁판.채용해방법제비적미전성기,재500Hz지11kHz적공작빈솔하,령민도범위위-55dB(1.78mV/Pa)도-45dB(5.6mV/Pa),수착빈솔적승고,령민도정상승추세,절지빈솔초과20kHz.
A new technique to fabricate silicon condenser microphone is presented.The technique is based on the use of oxidized porous silicon as sacrificial layer for the air gap and the heavy p+-doping silicon of approximately 15μm thickness for the stiff backplate.The measured sensitivity of the microphone fabricated with this technique is in the range from -45dB(5.6mV/Pa) to -55dB(1.78mV/Pa) under the frequency from 500Hz to 10kHz,and shows a gradual increase at higher frequency.The cut-off frequency is above 20kHz.