CAJ | 학술논문

研究了HgCdTe液相外延薄膜表面两类宏观缺陷的形成原因.研究表明,大部分表面凹陷点(void)缺陷的形成是由衬底的蜡沾污所引入的,而表面凸起点(hill-like)是由衬底边缘脱落的CdZnTe微颗粒造成的,通过控制外延生长前的衬底处理过程,可以抑制这两类缺陷,从而生长出零(宏观)缺陷密度的优质HgCdTe外延薄膜.
연구료HgCdTe액상외연박막표면량류굉관결함적형성원인.연구표명,대부분표면요함점(void)결함적형성시유츤저적사첨오소인입적,이표면철기점(hill-like)시유츤저변연탈락적CdZnTe미과립조성적,통과공제외연생장전적츤저처리과정,가이억제저량류결함,종이생장출령(굉관)결함밀도적우질HgCdTe외연박막.
Liquid phase epitaxy is a developed technique for the growth of HgCdTe films.Two kinds of macro defects on the surface of HgCdTe film were studied.It was demonstrated that the origin of the void defects was related to the wax contamination on CdZnTe substrate, while the defects of hill-like were due to the CdZnTe particles detached from the edge of the CdZnTe substrate.Through the fine controlling during the substrate preparation, these two kinds of defects can be depressed and the high quality HgCdTe films with zero defect density can be obtained.