红外与激光工程
紅外與激光工程
홍외여격광공정
INFRARED AND LASER ENGINEERING
2012年
5期
1311-1315
,共5页
桑田%蔡托%赵华%刘晓春%王占山
桑田%蔡託%趙華%劉曉春%王佔山
상전%채탁%조화%류효춘%왕점산
光谱特性%宽带反射器%带通滤光片
光譜特性%寬帶反射器%帶通濾光片
광보특성%관대반사기%대통려광편
spectral properties%wideband reflector%bandpass filter
宽带反射器和带通滤光片可以利用厚度固定为3.20 μm的锗亚波长周期薄膜实现.强折射率调制的锗亚波长周期薄膜使得泄漏模共振的带宽增大,因此泄漏模共振TEll、TE21和TE30能够发生相互作用.通过改变光栅深度,可以在波长λ=10.60μm附近形成高反射宽带和透射带.利用泄漏模共振TE11、TE21和TE30之间的叠加产生增强反射效应,从而形成具有高反射率的反射宽带.利用这些泄漏模共振边缘的叠加产生共振增强透射效应,从而获得具有高透射率的透射带.在这两种情况下分别研究了光栅的未刻蚀和过刻蚀效应,结果表明,为了获得良好的光谱性能,刻蚀过程中应该避免过刻蚀情况.
寬帶反射器和帶通濾光片可以利用厚度固定為3.20 μm的鍺亞波長週期薄膜實現.彊摺射率調製的鍺亞波長週期薄膜使得洩漏模共振的帶寬增大,因此洩漏模共振TEll、TE21和TE30能夠髮生相互作用.通過改變光柵深度,可以在波長λ=10.60μm附近形成高反射寬帶和透射帶.利用洩漏模共振TE11、TE21和TE30之間的疊加產生增彊反射效應,從而形成具有高反射率的反射寬帶.利用這些洩漏模共振邊緣的疊加產生共振增彊透射效應,從而穫得具有高透射率的透射帶.在這兩種情況下分彆研究瞭光柵的未刻蝕和過刻蝕效應,結果錶明,為瞭穫得良好的光譜性能,刻蝕過程中應該避免過刻蝕情況.
관대반사기화대통려광편가이이용후도고정위3.20 μm적타아파장주기박막실현.강절사솔조제적타아파장주기박막사득설루모공진적대관증대,인차설루모공진TEll、TE21화TE30능구발생상호작용.통과개변광책심도,가이재파장λ=10.60μm부근형성고반사관대화투사대.이용설루모공진TE11、TE21화TE30지간적첩가산생증강반사효응,종이형성구유고반사솔적반사관대.이용저사설루모공진변연적첩가산생공진증강투사효응,종이획득구유고투사솔적투사대.재저량충정황하분별연구료광책적미각식화과각식효응,결과표명,위료획득량호적광보성능,각식과정중응해피면과각식정황.
Wideband reflector and bandpass filter can be obtained by using a Ge subwavelength periodic membrane with the thickness kept constant at 3.20 μm.The strong refractive-index modulation of the Ge subwavelength periodic membrane yields increases bandwidth of the leaky mode resonances.Thus,the excitation of the leaky mode resonances TE11,TE21 and TE30 may interact to form a broad reflection band or a transmission passband near λ=10.60 μm by changing the grating thickness.By using the overlapping of the leaky mode resonances TE11,TE21 and TE30,enhanced reflection and a broad reflection band with high reflectivity were achieved.While using the overlapping of the edges of these multiple leaky mode resonances,a transmission passband with high transmissivity was obtained.The depth effects of underetching and overetching were investigated in both cases.The results show that an accurate etch depth control to avoid overetching is necessary to obtain good spectral performance from these devices.