微电子学
微電子學
미전자학
MICROELECTRONICS
2010年
1期
70-73
,共4页
柴旭朝%苏小波%顾晓峰%于宗光
柴旭朝%囌小波%顧曉峰%于宗光
시욱조%소소파%고효봉%우종광
微电容%标称电容%电荷放大器%C/V电路
微電容%標稱電容%電荷放大器%C/V電路
미전용%표칭전용%전하방대기%C/V전로
Small capacitance%Nominal capacitance%Charge amplifier%C/V circuit
结合电荷放大原理,通过设计高性能的运算放大器, 较好地完成了杂散电容的屏蔽,实现了高可靠性的微电容检测.采用CSMC 0.5 μm CMOS工艺,用Cadence Spectre对其进行仿真验证,能精确检测出aF量级的微电容.结合考虑不可避免的工艺误差,对差分标称电容的失配进行分析与校准.结果表明: 失配仅带来固定的失调,不会对C/V电路的灵敏度造成显著的影响.
結閤電荷放大原理,通過設計高性能的運算放大器, 較好地完成瞭雜散電容的屏蔽,實現瞭高可靠性的微電容檢測.採用CSMC 0.5 μm CMOS工藝,用Cadence Spectre對其進行倣真驗證,能精確檢測齣aF量級的微電容.結閤攷慮不可避免的工藝誤差,對差分標稱電容的失配進行分析與校準.結果錶明: 失配僅帶來固定的失調,不會對C/V電路的靈敏度造成顯著的影響.
결합전하방대원리,통과설계고성능적운산방대기, 교호지완성료잡산전용적병폐,실현료고가고성적미전용검측.채용CSMC 0.5 μm CMOS공예,용Cadence Spectre대기진행방진험증,능정학검측출aF량급적미전용.결합고필불가피면적공예오차,대차분표칭전용적실배진행분석여교준.결과표명: 실배부대래고정적실조,불회대C/V전로적령민도조성현저적영향.
Based on the principle of charge amplifier, a high performance operational amplifier was designed to shield stray capacitance, which enables high reliability small capacitance measurement.Fabricated in CSMC's 0.5 μm CMOS process and simulated with Cadence Spectre, the circuit can measure small capacitance precisely with a resolution of aF.Finally, mismatch of differential nominal capacitance caused by inevitable manufacturing errors was analyzed and calibrated.Results showed that mismatch only led to fixed drift, but no significant effect on sensitivity of the C/V circuit.