CAJ | 학술논문

通过在表面势公式中增加一高阶近似项,大大提高了传统表面势的解析近似精度.改进前通用参数的精度一般达到1nV量级,某些情况下只能达到0.03mV.改进后的方法在所有情况下精度都达到1pV量级.同时,改进后的近似方法消除了原有方法误差曲线中的毛刺现象.
통과재표면세공식중증가일고계근사항,대대제고료전통표면세적해석근사정도.개진전통용삼수적정도일반체도1nV량급,모사정황하지능체도0.03mV.개진후적방법재소유정황하정도도체도1pV량급.동시,개진후적근사방법소제료원유방법오차곡선중적모자현상.
A refinement of an analytical approximation of the surface potential in MOSFETs is proposed by introducing a high-order term. As compared to the conventional treatment with accuracy between 1nV and 0. 03mV in the cases with an oxide thickness tox = 1 ～ 10nm and substrate doping concentration Na = 1015 ～ 1018 cm-3 , this method yields an accuracy within about 1pV in all cases. This is comparable to numerical simulations, but does not require trading off much computation efficiency. More importantly, the spikes in the error curve associated with the traditional treatment are eliminated.