CAJ | 학술논문

分别对两种不同的6H-SiC晶体进行了总通量为5.74×10~(18) n· cm~(-2)、8.2×10~(18) n· cm~(-2)和1.72×10~(19) n· cm~(-2)的不同剂量的中子辐照,利用X射线衍射等手段观测了中子辐照引起的晶体内部损伤.结果表明:两种样品在不同的中子通量辐照下,消除部分原始缺陷的、纯度较高的样品辐照后的内部损伤明显小于纯度较低、内部原始缺陷较多的样品.样品的辐照损伤不仅取决于中子辐照剂量,还取决于其辐照时的成分和结构.晶体的结构缺陷和杂质,作为一种"钉扎",在辐照过程中作用极大,它们导致了晶体的长程缺陷(如位错)的大幅度增加.
분별대량충불동적6H-SiC정체진행료총통량위5.74×10~(18) n· cm~(-2)、8.2×10~(18) n· cm~(-2)화1.72×10~(19) n· cm~(-2)적불동제량적중자복조,이용X사선연사등수단관측료중자복조인기적정체내부손상.결과표명:량충양품재불동적중자통량복조하,소제부분원시결함적、순도교고적양품복조후적내부손상명현소우순도교저、내부원시결함교다적양품.양품적복조손상불부취결우중자복조제량,환취결우기복조시적성분화결구.정체적결구결함화잡질,작위일충"정찰",재복조과정중작용겁대,타문도치료정체적장정결함(여위착)적대폭도증가.
Two different 6H-SiC single crystals were neutron-irradiated with different dose of 5.74×10~(18) n·cm~(-2),8.2×10~(18) n·cm~(-2) and 1.72×10~(19) n·cm~(-2) respectively, the damages caused by neutron irradiation were studied by X-ray diffraction. It is found that the damages in the samples with higher purity or in the samples annealed before irradiation are less than that in the samples which are with lower purity or un-annealed. The experimental results indicate that the creations of irradiation damages are not only decided on the irradiation fluences, but also are decided on the structure and the composition of the samples. The inherent defects and the impurity atom play an important role in the irradiation process as the "pinning", which result in the increasing of the long-range defects such as dislocations.