北京大学学报（自然科学版）
北京大學學報（自然科學版）
북경대학학보（자연과학판）
ACTA SCIENTIARUM NATURALIUM UNIVERSITATIS PEKINENSIS
2008年
4期
517-521
,共5页
模拟集成电路%CMOS%带隙参考源%低温度系数%高阶温度补偿
模擬集成電路%CMOS%帶隙參攷源%低溫度繫數%高階溫度補償
모의집성전로%CMOS%대극삼고원%저온도계수%고계온도보상
analog integrated circuits%CMOS%bandgap reference%low temperature coefficient%high-order temperature compensation
介绍了一种基于CSMC 0.5-μm 2P3M n-阱混合信号CMOS工艺的高阶温度补偿的带隙参考源.该CMOS带隙参考源利用了Buck电压转换单元和与温度无关的电流,提供了一种对基极-发射极电压VBE的高阶温度补偿.它还采用共源共栅结构以提高电源抑制比.在5 V电源电压下,温度变化范围为-20～100℃时,该带隙参考源的温度系数为5.6 ppm/℃.当电源电压变化范围为4～6 V时,带隙参考源输出电压的变化为0.4 mV.
介紹瞭一種基于CSMC 0.5-μm 2P3M n-阱混閤信號CMOS工藝的高階溫度補償的帶隙參攷源.該CMOS帶隙參攷源利用瞭Buck電壓轉換單元和與溫度無關的電流,提供瞭一種對基極-髮射極電壓VBE的高階溫度補償.它還採用共源共柵結構以提高電源抑製比.在5 V電源電壓下,溫度變化範圍為-20～100℃時,該帶隙參攷源的溫度繫數為5.6 ppm/℃.噹電源電壓變化範圍為4～6 V時,帶隙參攷源輸齣電壓的變化為0.4 mV.
개소료일충기우CSMC 0.5-μm 2P3M n-정혼합신호CMOS공예적고계온도보상적대극삼고원.해CMOS대극삼고원이용료Buck전압전환단원화여온도무관적전류,제공료일충대기겁-발사겁전압VBE적고계온도보상.타환채용공원공책결구이제고전원억제비.재5 V전원전압하,온도변화범위위-20～100℃시,해대극삼고원적온도계수위5.6 ppm/℃.당전원전압변화범위위4～6 V시,대극삼고원수출전압적변화위0.4 mV.
A high-order temperature compensated bandgap reference (BGR) based on CSMC 0.5-μm 2P3M n-well mixed signal CMOS process is presented. This novel proposed CMOS bandgap reference takes advantage of both a Bucks voltage transfer cell and a temperature independent current, to provide a high-order temperature compensation of the base-emitter voltage VBE. Cascode structures are also introduced in this CMOS bandgap reference to improve the power supply rejection ratio (PSRR). This circuit achieves 5.6 ppm/℃ of temperature coefficient with temperature range from -20 to 100℃ at 5 V power supply. The variation in the output voltage of the bandgap reference is 0.4 mV when power supply changes from 4 V to 6 V.
