CAJ | 학술논문

设计制作了Ka频段高输出功率的单片功率放大器.基于河北半导体研究所的0.25μm栅长的75mm GaAsPHEMT工艺制作的三级功率放大器,芯片尺寸为19.25mm2(3.5mm×5.5mm).在32.5～35.5GHz的频率范围内,小信号线性增益大于16dB,带内平均1dB增益压缩点输出功率为29.8dBm,最大饱和输出功率为31dBm.
설계제작료Ka빈단고수출공솔적단편공솔방대기.기우하북반도체연구소적0.25μm책장적75mm GaAsPHEMT공예제작적삼급공솔방대기,심편척촌위19.25mm2(3.5mm×5.5mm).재32.5～35.5GHz적빈솔범위내,소신호선성증익대우16dB,대내평균1dB증익압축점수출공솔위29.8dBm,최대포화수출공솔위31dBm.
The performance of a microwave monolithic integrated circuit (MMIC) amplifier with high output power in the Ka-band is presented. Using 75mm 0.25μm GaAs PHEMT technology provided by the Hebei Semiconductor Research Institute,this three-stage power amplifier, with a chip size of 19. 25mm2 (3. 5mm × 5. 5mm),on 100μm GaAs substrate achieves a linear gain of more than 16dB in the 32. 5～35. 5GHz frequency range, with an average output power at 1dB gain compression of P1dB = 29. 8dBm and a maximum saturated output power of Psat = 31dBm.