半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2007年
1期
1-4
,共4页
李家业%赵永梅%刘兴昉%孙国胜%罗木昌%王雷%赵万顺%曾一平%李晋闽
李傢業%趙永梅%劉興昉%孫國勝%囉木昌%王雷%趙萬順%曾一平%李晉閩
리가업%조영매%류흥방%손국성%라목창%왕뢰%조만순%증일평%리진민
3C-SiC%异质外延生长%水平热壁CVD%均匀性
3C-SiC%異質外延生長%水平熱壁CVD%均勻性
3C-SiC%이질외연생장%수평열벽CVD%균균성
3C-SiC%heteroepitaxial growth%horizontal hot-wall CVD%uniformity
利用新改进的水平低压热壁CVD设备,改变生长时的压力和H2流速,在50mm的Si(100)和(111)衬底上获得了3C-SiC外延膜,并对外延膜的结构均匀性、电学均匀性和厚度均匀性进行了分析.X射线衍射图中出现了强的3C-SiC的特征峰,其中3C-SiC的(200)和(111)峰的半高宽分别为0.41°和0.21°.3C-SiC外延膜方块电阻的均匀性最好可达2.15%.厚度均匀性可达±5.7%(σ/mean值).
利用新改進的水平低壓熱壁CVD設備,改變生長時的壓力和H2流速,在50mm的Si(100)和(111)襯底上穫得瞭3C-SiC外延膜,併對外延膜的結構均勻性、電學均勻性和厚度均勻性進行瞭分析.X射線衍射圖中齣現瞭彊的3C-SiC的特徵峰,其中3C-SiC的(200)和(111)峰的半高寬分彆為0.41°和0.21°.3C-SiC外延膜方塊電阻的均勻性最好可達2.15%.厚度均勻性可達±5.7%(σ/mean值).
이용신개진적수평저압열벽CVD설비,개변생장시적압력화H2류속,재50mm적Si(100)화(111)츤저상획득료3C-SiC외연막,병대외연막적결구균균성、전학균균성화후도균균성진행료분석.X사선연사도중출현료강적3C-SiC적특정봉,기중3C-SiC적(200)화(111)봉적반고관분별위0.41°화0.21°.3C-SiC외연막방괴전조적균균성최호가체2.15%.후도균균성가체±5.7%(σ/mean치).
50mm 3C-SiC epilayers are grown on (100) and (111) Si substrates in a newly developed horizontal low-pressure hot-wall CVD reactor under different growth pressures and flow rates of H2 carrier gas.The structure,electrical properties,and thickness uniformity of the 3C-SiC epilayers are investigated by X-ray diffraction (XRD),sheet resistance measurement,and spectroscopic ellipsometry.XRD patterns show that the 3C-SiC films have excellent crystallinity.The narrowest full widths at half maximum of the SiC(200) and (111) peaks are 0.41° and 0.21°,respectively.The best electrical uniformity of the 50mm 3C-SiC films obtained by sheet resistance measurement is 2.15%.A σ/mean value of ±5.7% in thickness uniformity is obtained.
