半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2007年
1期
14-18
,共5页
部分耗尽绝缘体上硅%击穿%背栅沟道注入
部分耗儘絕緣體上硅%擊穿%揹柵溝道註入
부분모진절연체상규%격천%배책구도주입
PDSOI%breakdown%back channel implantation
分别采用不同的背栅沟道注入剂量制成了部分耗尽绝缘体上硅浮体和H型栅体接触n型沟道器件.对这些器件的关态击穿特性进行了研究.当背栅沟道注入剂量从1.0×1013增加到1.3×1013cm-2,浮体n型沟道器件关态击穿电压由5.2升高到6.7V,而H型栅体接触n型沟道器件关态击穿电压从11.9降低到9V.通过测量寄生双极晶体管静态增益和漏体pn结击穿电压,对部分耗尽绝缘体上硅浮体和H型栅体接触n型沟道器件的击穿特性进行了定性解释和分析.
分彆採用不同的揹柵溝道註入劑量製成瞭部分耗儘絕緣體上硅浮體和H型柵體接觸n型溝道器件.對這些器件的關態擊穿特性進行瞭研究.噹揹柵溝道註入劑量從1.0×1013增加到1.3×1013cm-2,浮體n型溝道器件關態擊穿電壓由5.2升高到6.7V,而H型柵體接觸n型溝道器件關態擊穿電壓從11.9降低到9V.通過測量寄生雙極晶體管靜態增益和漏體pn結擊穿電壓,對部分耗儘絕緣體上硅浮體和H型柵體接觸n型溝道器件的擊穿特性進行瞭定性解釋和分析.
분별채용불동적배책구도주입제량제성료부분모진절연체상규부체화H형책체접촉n형구도기건.대저사기건적관태격천특성진행료연구.당배책구도주입제량종1.0×1013증가도1.3×1013cm-2,부체n형구도기건관태격천전압유5.2승고도6.7V,이H형책체접촉n형구도기건관태격천전압종11.9강저도9V.통과측량기생쌍겁정체관정태증익화루체pn결격천전압,대부분모진절연체상규부체화H형책체접촉n형구도기건적격천특성진행료정성해석화분석.
Partially-depleted silicon-on-insulator(PDSOI)floating-body(FB)nMOSFETs and H-gate type body-contacted(BC)nMOSFETs are fabricated with different back channel implantation dosages.The off-state breakdown characteristics of these devices are presented.The off-state breakdown voltages of the FB nMOSFETs increase from 5.2 to 6.7V,and those of the H-gate type BC nMOSFETs decrease from 11.9 to 9V as the back channel implantation dosages increase from 1.0×1013 to 1.3×1013cm-2.By measuring the parasitic bipolar transistor static gain and the breakdown characteristics of the pn junction between the drain and the body,the differences between the breakdown mechanisms of the FB and H-gate type BC nMOSFETs are analyzed and explained qualitatively.
