CAJ | 학술논문

使用高阻Si材料,通过氧化、光刻、注入和退火工艺技术研制粒子探测器——PIN二极管．采取HCl氧化、慢降温等工艺措施可减小PIN二极管的暗电流(反向电流)，这对于提高器件性能起到了关键作用．电压为-5V时,探测器的暗电流可达nA/cm2量级．讨论了器件暗电流与少子寿命的关系．
사용고조Si재료,통과양화、광각、주입화퇴화공예기술연제입자탐측기——PIN이겁관．채취HCl양화、만강온등공예조시가감소PIN이겁관적암전류(반향전류)，저대우제고기건성능기도료관건작용．전압위-5V시,탐측기적암전류가체nA/cm2량급．토론료기건암전류여소자수명적관계．
The　fabrication of PIN silicon detector has　been described in details　with　some　advanced microelectronic technologies,including oxidation,lithography and implantation and annealing.Slowly decrease the temperature after HCl handling,a low dark current (reverse current) can be obtained.At -5V,the performanc of the detector is perfect,and the leakage current is 10nA/cm2.The　relationship between the　dark current and the minority carrier lifetime has　also　been discussed,as　well　as　the　measuring method of the minority carrier lifetime.