CAJ | 학술논문

从数值解源端和饱和点的表面电势出发，考虑模拟电路对SOI MOSFET模型的一些基本要求如电荷守恒、器件源漏本征对称、各个工作区间连续并且高阶可导以及全耗尽和部分耗尽两种工作模式的转变，构建了一个能够满足这些要求的精确的器件模型．同时包含了深亚微米SOI MOSFET的一些二级效应如漏极诱生势垒降低效应（DIBL）、速度饱和效应、自热效应等．这个模型的参数相对较少并且精确连续，能够满足在模拟电路设计分析中的应用要求．
종수치해원단화포화점적표면전세출발，고필모의전로대SOI MOSFET모형적일사기본요구여전하수항、기건원루본정대칭、각개공작구간련속병차고계가도이급전모진화부분모진량충공작모식적전변，구건료일개능구만족저사요구적정학적기건모형．동시포함료심아미미SOI MOSFET적일사이급효응여루겁유생세루강저효응（DIBL）、속도포화효응、자열효응등．저개모형적삼수상대교소병차정학련속，능구만족재모의전로설계분석중적응용요구．
A physics-based model for SOI MOSFET has been presented,which is suitable for the design of analog integrated circuits.The model is proved to be of the fundamental properties,such as charge conservation,MOSFET source-to-drain intrinsic symmetry,continuity and conversion in derivatives of drain current and natural transition between the fully-depleted mode and the partially-depleted one of SOI MOSFET.At the same time,some second order effects of deep submicron devices have been described,such as DIBL(Drain Induced Barrier Lower Effect),carrier velocity overshoot and self heating.The accuracy of the presented model has been verified by the experimental data of SOI MOSFET with various geometry.