半导体学报
半導體學報
반도체학보
CHINESE JOURNAL OF SEMICONDUCTORS
2001年
1期
83-90
,共8页
赵颖%熊绍珍%周祯华%李景%LI Jun-feng
趙穎%熊紹珍%週禎華%李景%LI Jun-feng
조영%웅소진%주정화%리경%LI Jun-feng
有源选址%非晶硅薄膜晶体管%非晶硅光敏二极管%图像传感器
有源選阯%非晶硅薄膜晶體管%非晶硅光敏二極管%圖像傳感器
유원선지%비정규박막정체관%비정규광민이겁관%도상전감기
在模拟计算以a-Si TFT为有源开关，以a-Si PIN为光敏源的有源成像器件工作特性与各单元元件关系的基础上，详细讨论了单元器件的材料、物理参数对a-Si TFT/PIN耦合对特性的影响，并给出一定试验结果．用LED光源照射a-Si PIN的光电转换率可达18.1nA/lx，a-Si TFT/PIN有较好的线性度.
在模擬計算以a-Si TFT為有源開關，以a-Si PIN為光敏源的有源成像器件工作特性與各單元元件關繫的基礎上，詳細討論瞭單元器件的材料、物理參數對a-Si TFT/PIN耦閤對特性的影響，併給齣一定試驗結果．用LED光源照射a-Si PIN的光電轉換率可達18.1nA/lx，a-Si TFT/PIN有較好的線性度.
재모의계산이a-Si TFT위유원개관，이a-Si PIN위광민원적유원성상기건공작특성여각단원원건관계적기출상，상세토론료단원기건적재료、물리삼수대a-Si TFT/PIN우합대특성적영향，병급출일정시험결과．용LED광원조사a-Si PIN적광전전환솔가체18.1nA/lx，a-Si TFT/PIN유교호적선성도.
The effect of a-Si TFT and a-Si PIN diode performance on a-Si TFT/PIN coupled pairs of active addressing image sensors array has been studied by simulation and experiment.High switch ratio a-Si TFT and high photosensitivity of a-Si PIN diodes have been obtained.The photo-converted ratio of a-Si PIN is about 18.1 nA/lx.The good linear relationship between the photo-current and the illuminated intensity has been obtained in the a-Si TFT/PIN image sensors.
