CAJ | 학술논문

基于界面陷阱的定义,通过分别对亚阈值摆幅漂移和亚阈区栅电压漂移采用弛豫谱技术有效地提取了1.9nm MOS结构中的界面陷阱密度和它的能量分布.发现这两种方法提取的界面陷阱密度的能量分布是自洽的,同时也与文献报道的DCIV等方法的结果是一致的.与其它的提取方法相比,采用弛豫谱技术的这两种方法更加简单和方便.
기우계면함정적정의,통과분별대아역치파폭표이화아역구책전압표이채용이예보기술유효지제취료1.9nm MOS결구중적계면함정밀도화타적능량분포.발현저량충방법제취적계면함정밀도적능량분포시자흡적,동시야여문헌보도적DCIV등방법적결과시일치적.여기타적제취방법상비,채용이예보기술적저량충방법경가간단화방편.
According to the definition of interface traps,a new application of relaxation spectral technique to sub-threshold swing shift and sub-threshold gate voltage shift is proposed to extract interface trap density in 1.9nm MOSFET.And thus the energy distribution of interface trap can be determined.According to the two methods,the energy profile of interface traps agrees with those reported in literature.Compared to other methods,this method is simpler and more convenient.