物理学报
物理學報
물이학보
2001年
2期
361-364
,共4页
时东霞%张昊旭%解思深%庞世瑾%高鸿钧%宋延林
時東霞%張昊旭%解思深%龐世瑾%高鴻鈞%宋延林
시동하%장호욱%해사심%방세근%고홍균%송연림
超高密度信息存储%有机薄膜%扫描隧道显微镜(STM)
超高密度信息存儲%有機薄膜%掃描隧道顯微鏡(STM)
초고밀도신식존저%유궤박막%소묘수도현미경(STM)
采用扫描隧道显微镜(STM)在3-phenyl-1-ureidonitrile (PUN)有机单体薄膜上进行了超高密度信息存储的研究.通过在STM针尖和高定向裂解石墨(HOPG)衬底之间施加一系列的电压脉冲，在薄膜上写入了一个稳定的5×6信息点阵，信息点的大小是0.8?nm.电流-电压(I-V)曲线表明，施加电压脉冲前后薄膜的导电性质发生了变化.信息点的写入机制可能是强电场作用下引发的PUN分子的局域聚合，从而导致薄膜由高电阻态向低电阻态转变.
採用掃描隧道顯微鏡(STM)在3-phenyl-1-ureidonitrile (PUN)有機單體薄膜上進行瞭超高密度信息存儲的研究.通過在STM針尖和高定嚮裂解石墨(HOPG)襯底之間施加一繫列的電壓脈遲，在薄膜上寫入瞭一箇穩定的5×6信息點陣，信息點的大小是0.8?nm.電流-電壓(I-V)麯線錶明，施加電壓脈遲前後薄膜的導電性質髮生瞭變化.信息點的寫入機製可能是彊電場作用下引髮的PUN分子的跼域聚閤，從而導緻薄膜由高電阻態嚮低電阻態轉變.
채용소묘수도현미경(STM)재3-phenyl-1-ureidonitrile (PUN)유궤단체박막상진행료초고밀도신식존저적연구.통과재STM침첨화고정향렬해석묵(HOPG)츤저지간시가일계렬적전압맥충，재박막상사입료일개은정적5×6신식점진，신식점적대소시0.8?nm.전류-전압(I-V)곡선표명，시가전압맥충전후박막적도전성질발생료변화.신식점적사입궤제가능시강전장작용하인발적PUN분자적국역취합，종이도치박막유고전조태향저전조태전변.
Ultrahigh-density data storage on a 3-phenyl-1-ureidonitrile (PUN) thin film was performed using a scanning tunneling microscope. The recorded marks of 0.8?nm in diameter were obtained when voltage pulses of 4 V for 10ms were applied between the STM tip and highly ordered pyrolytic graphite substrate. The current-voltage relations at the local regions of the films indicate that the recorded region is conductive and the unrecorded region is in a high impedance state. A possible mechanism of this data storage was suggested and discussed.
