物理化学学报
物理化學學報
물이화학학보
ACTA PHYSICO-CHIMICA SINICA
2010年
7期
2049-2052
,共4页
王小燕%董桂芳%乔娟%段炼%王立铎%邱勇
王小燕%董桂芳%喬娟%段煉%王立鐸%邱勇
왕소연%동계방%교연%단련%왕립탁%구용
氧化锌%溶液处理%水溶液%带隙%电导性
氧化鋅%溶液處理%水溶液%帶隙%電導性
양화자%용액처리%수용액%대극%전도성
ZnO%Solution process%Water solution%Band gap energy%Conductivity
通过旋涂法,采用Zn(OAc)2·2H2O和聚环氧乙烷(PEO)的水溶液为前驱体在不同的热处理温度下制备了ZnO薄膜.PEO的加入增加了溶液的成膜性,其较低的热分解温度有利于制得纯净的ZnO薄膜.文中考察了在不同热处理温度下制备的ZnO薄膜的形貌、结晶性、带隙(Eg)以及电导性.原子力显微镜(AFM)测试表明在热处理温度为400、450和500℃制备的ZnO薄膜的粗糙度均方根值分别为3.3、2.7和3.6 nm.采用透射电子显微镜(TEM)测试发现ZnO薄膜中含有大量纳晶粒子.通过测试ZnO薄膜的UV-Vis吸收光谱,根据薄膜位于373nm处的吸收带边计算得到ZnO的带隙为3.3 eV.通过对薄膜的电流一电压(I-V)曲线的测试计算得到在热处理温度为400、450和500℃制备的ZnO薄膜的电阻率分别为3.3×109、2.7×109和6.6×109 Ω·cm.450℃时制备的ZnO薄膜的电阻率最小,主要是由于较高的热处理温度有利于提高薄膜的纯度、密度和吸附氧.而纯度较高、密度较大的薄膜电阻率比较小;吸附氧含量增加,晶界势垒增大,电阻率增大.因此在纯度和吸附氧的双重作用下450℃时制备的ZnO薄膜的电阻率最小,而500℃时制备的ZnO薄膜的电阻率最大.
通過鏇塗法,採用Zn(OAc)2·2H2O和聚環氧乙烷(PEO)的水溶液為前驅體在不同的熱處理溫度下製備瞭ZnO薄膜.PEO的加入增加瞭溶液的成膜性,其較低的熱分解溫度有利于製得純淨的ZnO薄膜.文中攷察瞭在不同熱處理溫度下製備的ZnO薄膜的形貌、結晶性、帶隙(Eg)以及電導性.原子力顯微鏡(AFM)測試錶明在熱處理溫度為400、450和500℃製備的ZnO薄膜的粗糙度均方根值分彆為3.3、2.7和3.6 nm.採用透射電子顯微鏡(TEM)測試髮現ZnO薄膜中含有大量納晶粒子.通過測試ZnO薄膜的UV-Vis吸收光譜,根據薄膜位于373nm處的吸收帶邊計算得到ZnO的帶隙為3.3 eV.通過對薄膜的電流一電壓(I-V)麯線的測試計算得到在熱處理溫度為400、450和500℃製備的ZnO薄膜的電阻率分彆為3.3×109、2.7×109和6.6×109 Ω·cm.450℃時製備的ZnO薄膜的電阻率最小,主要是由于較高的熱處理溫度有利于提高薄膜的純度、密度和吸附氧.而純度較高、密度較大的薄膜電阻率比較小;吸附氧含量增加,晶界勢壘增大,電阻率增大.因此在純度和吸附氧的雙重作用下450℃時製備的ZnO薄膜的電阻率最小,而500℃時製備的ZnO薄膜的電阻率最大.
통과선도법,채용Zn(OAc)2·2H2O화취배양을완(PEO)적수용액위전구체재불동적열처리온도하제비료ZnO박막.PEO적가입증가료용액적성막성,기교저적열분해온도유리우제득순정적ZnO박막.문중고찰료재불동열처리온도하제비적ZnO박막적형모、결정성、대극(Eg)이급전도성.원자력현미경(AFM)측시표명재열처리온도위400、450화500℃제비적ZnO박막적조조도균방근치분별위3.3、2.7화3.6 nm.채용투사전자현미경(TEM)측시발현ZnO박막중함유대량납정입자.통과측시ZnO박막적UV-Vis흡수광보,근거박막위우373nm처적흡수대변계산득도ZnO적대극위3.3 eV.통과대박막적전류일전압(I-V)곡선적측시계산득도재열처리온도위400、450화500℃제비적ZnO박막적전조솔분별위3.3×109、2.7×109화6.6×109 Ω·cm.450℃시제비적ZnO박막적전조솔최소,주요시유우교고적열처리온도유리우제고박막적순도、밀도화흡부양.이순도교고、밀도교대적박막전조솔비교소;흡부양함량증가,정계세루증대,전조솔증대.인차재순도화흡부양적쌍중작용하450℃시제비적ZnO박막적전조솔최소,이500℃시제비적ZnO박막적전조솔최대.
We successfully prepared ZnO thin films through spin-coating a mixture of zinc acetate dihydrate,poly (ethylene oxide) (PEO) and deionized H2O.Smooth and pure ZnO thin films were obtained by using PEO,because of its low thermal decomposition temperature.The morphology,crystallinity,band gap energy (Eg),and conductivity of the ZnO thin films annealed at different temperatures were determined.Atomic force microscopy (AFM) showed that the root mean square (rms) surface roughness of films annealed at 400,450,and 500℃ was 3.3,2.7,and 3.6 nm,respectively.TEM images showed that the ZnO films were composed of ZnO nanocrystals.The band gap energy (Eg) for the films was calculated as 3.3 eV from the absorption edge at 373 nm.From their current-voltage (I-V) curves the resistivities of ZnO thin films annealed at 400,450,and 500℃ were calculated as 3.3×109,2.7×109,and 6.6×109 Ω·cm,respectively.High annealing temperature is useful in improving purity and density of the film and increasing adsorbed oxygen on the film.The film with high purity and density will exhibit low resistivity.The film with more adsorbed oxygen will exhibit high resistivity,due to higher grain boundary barrier.Consequently,the ZnO thin film annealed at 450℃ exhibited the lowest resistivity,while the ZnO thin film annealed at 500℃ had the highest resistivity.
