中国光学快报(英文版)
中國光學快報(英文版)
중국광학쾌보(영문판)
CHINESE JOURNAL OF LASERS
2003年
4期
220-221
,共2页
殷宗友%曹殿生%殷景志%张源涛%李正庭%杜国同%杨树人
慇宗友%曹殿生%慇景誌%張源濤%李正庭%杜國同%楊樹人
은종우%조전생%은경지%장원도%리정정%두국동%양수인
In this paper, the GaN based epitaxial wafer is fabricated on big 1 mm×1 mm chips, and packaged witha special technology. At working current 350 mA and working voltage 3.74 V, the full viewing angle, theaxial brightness and the output integral power of the 465 nm LED can reach 125°, 210,000 cd/m2 and 1.5lm, respectively. The LED with such good performances has promising application potential in the fieldsof display, traffic and the development of solid-state white light source.
