CAJ | 학술논문

氮化镓(GaN)材料已成功应用于光电子器件、高频功率器件等领域.近年来,由于GaN优异的材料特性,例如机械、热、化学稳定性以及生物兼容性等,使基于GaN的微机电系统(MEMS)得到了学术界的广泛关注.针对氮化镓MEMS结构的有效的图形化及释放技术是工艺研究的重点.设计、采用了一种全干法刻蚀技术,实现了(111)晶向硅衬底上的氮化镓基MEMS微结构的加工制造.利用提出的工艺方案,实现了多种悬浮GaN微结构的加工与测试表征实验.通过电子扫描显微镜(SEM)和光学轮廓仪进行了基本形貌表征;利用微拉曼光谱实验进行了加工结构的残余应力表征.
담화가(GaN)재료이성공응용우광전자기건、고빈공솔기건등영역.근년래,유우GaN우이적재료특성,례여궤계、열、화학은정성이급생물겸용성등,사기우GaN적미궤전계통(MEMS)득도료학술계적엄범관주.침대담화가MEMS결구적유효적도형화급석방기술시공예연구적중점.설계、채용료일충전간법각식기술,실현료(111)정향규츤저상적담화가기MEMS미결구적가공제조.이용제출적공예방안,실현료다충현부GaN미결구적가공여측시표정실험.통과전자소묘현미경(SEM)화광학륜곽의진행료기본형모표정;이용미랍만광보실험진행료가공결구적잔여응력표정.
Besides the success in optoelectronic devices and high frequency power transistors, gallium nitride (GaN) is drawing intensive attentions superior mechanical, thermal and chemical stability and bio-compatibility. The effective means to pattern and release the GaN-based MEMS structures are of particular technological importance. In this paper, GaN-based MEMS microstructures were obtained on the (111) silicon substrate using a dry-etch-only fabrication technique. Various suspended GaN microstructures were fabricated by the proposed fabrication process and characterized through scanning electron microscope (SEM) and optical micro-profiler. To characterize the residual stress distribution of the fabricated microstructures, micro-Raman spectroscopy was employed.