CAJ | 학술논문

利用两种Cs基衍生物碳酸铯(Cs2CO3)和醋酸铯(CH3COOCs)作为n型掺杂剂掺入到一种新型的电子传输材料2,9-二(2-萘基)-4,7-二苯基-1,10-菲啰啉(NBPhen)中来提高有机发光二极管(OLEDs)的效率.实验结果表明:器件的驱动电压明显降低.并且优化后得到的Cs基n型掺杂器件(ITO/β-NPB/CBP:5％(W)N-BDAVBi/NBPhen/NBPhen:Cs2CO3 (or CH3COOCs)/Al)呈现出较好的电致发光性能,在14V时电流密度分别为551,80和527.88 mA· cm-2,对应的亮度分别达到39750和39820 cd· m-2,电流效率在亮度为10000 cd· m-2时分别为14.60 cd·A-1(Cs2CO3掺杂)和14.40 cd ·A-1 (CH3COOCs掺杂),这些参数明显优于传统器件的发光性能(ITO/β-NPB/CBP:5％(W)N-BDAVBi/NBPhen/Cs2CO3/Al,其在14 V时电流密度为312.39 mA+cm-2,对应的亮度为25190 cd·m-2;电流效率在亮度为10000 cd· m-2时为9.45 cd·A-1.此外,基于有机半导体掺杂原理和器件的能级结构对n型掺杂器件效率提高的原因进行了分析.
이용량충Cs기연생물탄산색(Cs2CO3)화작산색(CH3COOCs)작위n형참잡제참입도일충신형적전자전수재료2,9-이(2-내기)-4,7-이분기-1,10-비라람(NBPhen)중래제고유궤발광이겁관(OLEDs)적효솔.실험결과표명:기건적구동전압명현강저.병차우화후득도적Cs기n형참잡기건(ITO/β-NPB/CBP:5％(W)N-BDAVBi/NBPhen/NBPhen:Cs2CO3 (or CH3COOCs)/Al)정현출교호적전치발광성능,재14V시전류밀도분별위551,80화527.88 mA· cm-2,대응적량도분별체도39750화39820 cd· m-2,전류효솔재량도위10000 cd· m-2시분별위14.60 cd·A-1(Cs2CO3참잡)화14.40 cd ·A-1 (CH3COOCs참잡),저사삼수명현우우전통기건적발광성능(ITO/β-NPB/CBP:5％(W)N-BDAVBi/NBPhen/Cs2CO3/Al,기재14 V시전류밀도위312.39 mA+cm-2,대응적량도위25190 cd·m-2;전류효솔재량도위10000 cd· m-2시위9.45 cd·A-1.차외,기우유궤반도체참잡원리화기건적능급결구대n형참잡기건효솔제고적원인진행료분석.
The efficiency of organic light-emitting diodes (OLEDs) was markedly improved using the novel electron transporting material 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (NBPhen)doped with Cs-derivatives including cesium carbonate (Cs2CO3) and cesium acetate (CH3COOCs) as the n-type dopant.The operating voltage of devices containing these materials as an n-type electron transporting layer (n-ETL) was significantly reduced.Optimized devices with Cs2CO3-doped or CH3COOCs-doped n-ETL (ITO/β-NPB/CBP:5％ (w) N-BDAVBi/NBPhen/NBPhen:Cs2CO3 (or CH3COOCs)/Al) exhibited excellent electroluminescent performance with current densities of 551.80 and 527.88 mA· cm-2 at 14 V,corresponding brightnesses of 39750 and 39820 cd· m-2,and current efficiencies of 14.60 and 14.40 cd ·A-1 at 10000 cd· m-2,respectively.These results were superior to that of conventional device (ITO/β-NPB/CBP:5％(w)N-BDAVBi/NBPhen/Cs2CO3/Al) without an n-ETL,which exhibited a current density of 312.39 mA· cm-2 at 14 V,corresponding brightness of 25190 cd·m-2,and current efficiency of 9.45 cd ·A-1 at 10000 cd· m-2.In addition,the reason for the increase in the efficiency of n-type doped devices has been analyzed based on the concept of the doping mechanism in organic semiconductors and the energy level scheme of the devices.