CAJ | 학술논문

采用硫酸盐电沉积法,利用X射线衍射仪(XRD)、扫描电镜(SEM)等手段研究了不同电沉积条件下在PI膜表面制备的Cu薄膜的品而择优取向、平均晶粒尺寸及表面形貌.结果表明,沉积层的晶面择优取向受Cu薄膜厚度和电流密度影响,电流密度较小(0.2 A/dm2)和较大(3.5～5.5 A/dm2)时,电沉积Cu膜分别容易得到(111)和(220)晶面择优取向,较大电流密度有利于晶核的形成,薄膜表面平均颗粒尺寸较小.
채용류산염전침적법,이용X사선연사의(XRD)、소묘전경(SEM)등수단연구료불동전침적조건하재PI막표면제비적Cu박막적품이택우취향、평균정립척촌급표면형모.결과표명,침적층적정면택우취향수Cu박막후도화전류밀도영향,전류밀도교소(0.2 A/dm2)화교대(3.5～5.5 A/dm2)시,전침적Cu막분별용역득도(111)화(220)정면택우취향,교대전류밀도유리우정핵적형성,박막표면평균과립척촌교소.
Cu electro-deposits growing on the flexible PI (polyimide) substrate on which a Cu conductive layer has already been predeposited by magnetron sputtering were studied under different conditions by XRD and SEM for preferred orientation,average grain size and surface morphology with CuS04 used as electrolytic solution.The results revealed that the preferred orientation of crystal plane of Cu electro-deposits is affected by the thickness of Cu films and current density,and the(111) and(220) preferred orientation is easy to obtain in the Cu electro-deposit film when the current density is low(0.2A/dm2) and high 3.5～5.5 A/dm2,respectively.It implies that the high current density benefits the formation of nucleus of crystal with smaller average grain size on film surface.