CAJ | 학술논문

空洞等缺陷是SiC晶体生长中常见的缺陷之一。通过改进SiC籽晶粘接工艺,在SiC籽晶和籽晶托之间形成致密层,有效抑制了空洞缺陷的产生,改善了SiC晶体的结晶质量。采用该工艺生长的SiC晶体内已观察不到空洞缺陷,微管密度也得到抑制,晶体半峰宽40″,结晶质量良好。
공동등결함시SiC정체생장중상견적결함지일。통과개진SiC자정점접공예,재SiC자정화자정탁지간형성치밀층,유효억제료공동결함적산생,개선료SiC정체적결정질량。채용해공예생장적SiC정체내이관찰불도공동결함,미관밀도야득도억제,정체반봉관40″,결정질량량호。
The Hexgenal hole is the normal defect in the SiC crystal growth.The hexgenal hole defect is inhibited effectively by improving the SiC seed mounting method,which is informing the dense layer between the seed and the holder.The quality of crystal is improved by this method.The results show that： the Hexgenal hole defects is few to see,the FWHM is about 40 arcsec.,which shows that the quality is better.