CAJ | 학술논문

本文详细研究了采用Cl2/H2刻蚀气体时,ICP刻蚀系统对InP/InGaAsP材料表面损伤的影响.通过设计特殊结构的InP/InGaAsP多量子阱结构,测量刻蚀区域及非刻蚀区域的光荧光强度的变化,并结合高斯深度分布模型对刻蚀损伤进行定量研究.详细研究ICP刻蚀系统中的压强、ICP功率、RF功率以及Cl1/H2刻蚀气体组分对损伤程度的影响.基于这些结果优化得到一组低损伤参数,最终实现刻蚀损伤深度小于16nm.
본문상세연구료채용Cl2/H2각식기체시,ICP각식계통대InP/InGaAsP재료표면손상적영향.통과설계특수결구적InP/InGaAsP다양자정결구,측량각식구역급비각식구역적광형광강도적변화,병결합고사심도분포모형대각식손상진행정량연구.상세연구ICP각식계통중적압강、ICP공솔、RF공솔이급Cl1/H2각식기체조분대손상정도적영향.기우저사결과우화득도일조저손상삼수,최종실현각식손상심도소우16nm.
Using Cl2/H2 as etching etchants,the surface damage of the InP/InGaAsP material in ICP etching system Was investigated.By measuring the changes of photoluminescence(PL)intensity from a specially designed InP/InGaAsP multi-quantum well(MQW)in both exposed and protected regions,and utilizing a Gaussian Depth Distribution model,the extent of damage was quantitatively analyzed.The influences of pressure,ICP power,RF power and Cl2/H2 mixing ratio of ICP system on the surface damage extent were revealed.Based on these results,a set of optimized low damage etching parameters with a less than 16 nm damage-depth was finally obtained.