电子元件与材料
電子元件與材料
전자원건여재료
ELECTRONIC COMPONENTS & MATERIALS
2009年
11期
32-35
,共4页
辛艳青%姜丽莉%宋淑梅%杨田林%李延辉
辛豔青%薑麗莉%宋淑梅%楊田林%李延輝
신염청%강려리%송숙매%양전림%리연휘
透明导电膜%射频磁控溅射%三层膜%GZO/Ag/GZO%真空退火
透明導電膜%射頻磁控濺射%三層膜%GZO/Ag/GZO%真空退火
투명도전막%사빈자공천사%삼층막%GZO/Ag/GZO%진공퇴화
TCO%radio frequency magnetron sputtering%three-layer films%GZO/Ag/GZO%vacuum annealing
室温下在玻璃衬底上,采用射频磁控溅射GZO(Ga掺杂ZnO)膜和离子束溅射Ag膜的方法,制备了GZO/Ag/GZO三层膜,分析了真空退火温度对样品结构、光学、电学性能的影响.结果显示:随着退火温度的升高,Ag层的结构得到明显改善,但GZO层结晶度受到了Ag扩散的影响.经过350 ℃退火后,样品在可见光区平均透射率达92.63%,电阻率由8.0×10~(-5) Ω·cm降至4.0×10~(-5) Ω·cm.
室溫下在玻璃襯底上,採用射頻磁控濺射GZO(Ga摻雜ZnO)膜和離子束濺射Ag膜的方法,製備瞭GZO/Ag/GZO三層膜,分析瞭真空退火溫度對樣品結構、光學、電學性能的影響.結果顯示:隨著退火溫度的升高,Ag層的結構得到明顯改善,但GZO層結晶度受到瞭Ag擴散的影響.經過350 ℃退火後,樣品在可見光區平均透射率達92.63%,電阻率由8.0×10~(-5) Ω·cm降至4.0×10~(-5) Ω·cm.
실온하재파리츤저상,채용사빈자공천사GZO(Ga참잡ZnO)막화리자속천사Ag막적방법,제비료GZO/Ag/GZO삼층막,분석료진공퇴화온도대양품결구、광학、전학성능적영향.결과현시:수착퇴화온도적승고,Ag층적결구득도명현개선,단GZO층결정도수도료Ag확산적영향.경과350 ℃퇴화후,양품재가견광구평균투사솔체92.63%,전조솔유8.0×10~(-5) Ω·cm강지4.0×10~(-5) Ω·cm.
GZO/Ag/GZO three-layer films were prepared on glass substrates by radio frequency magnetron sputtering of GZO layers and ion beam sputtering of Ag layers at room temperature. The effects of vacuum annealing temperature on the structural, optical and electrical properties of GZO/Ag/GZO three-layer films were investigated. The results show that the structure of Ag layer is significantly improved with the increasing of annealing temperature, but the crystallinity of GZO layers is affected by diffusion of Ag. After annealing treatment at 350℃, the resistivity is decreased from 8.0×10~(-5) Ω·cm to 4.0×10~(-5) Ω·cm, and an average transmittance of 92.63% in the visible range of GZO/Ag/GZO films is obtained.