半导体桥上尖角、圆孔对其电爆性能的影响
반도체교상첨각、원공대기전폭성능적영향
Effect of V-type Angle and Hole of Semiconductor Bridge on Electro-explosive Performance
  • 万方数据
    含能材料 함능재료
    ENERGETIC MATERIALS
    2009年 3期 349-352 ,共4页

    周彬%毛国强%秦志春%祝逢春%徐振相%陈飞%张文超

    주빈%모국강%진지춘%축봉춘%서진상%진비%장문초

    应用化学%火工品%半导体桥%发火时间%发火消耗能量 應用化學%火工品%半導體橋%髮火時間%髮火消耗能量
    응용화학%화공품%반도체교%발화시간%발화소모능량
    applied chemistry%igniting device%semiconductor bridge%function time%firing energy required
    设计了14种带有尖角和圆孔的半导体桥,研究了在电容放电发火条件下尖角、圆孔对其发火时间、发火所消耗的能量等性能参数的影响规律,并从半导体桥的作用机理方面对实验结果进行了分析.结果表明,SCB上V型尖角使得SCB发火时间和发火所消耗的能量明显降低,而圆孔对SCB发火性能影响不明显.
    설계료14충대유첨각화원공적반도체교,연구료재전용방전발화조건하첨각、원공대기발화시간、발화소소모적능량등성능삼수적영향규률,병종반도체교적작용궤리방면대실험결과진행료분석.결과표명,SCB상V형첨각사득SCB발화시간화발화소소모적능량명현강저,이원공대SCB발화성능영향불명현.
    Fourteen kinds of SCBs with V-type angle and hole were designed, and the electro-explosive performances including the function time, energy required were investigated with firing by capacitor discharge circuit. The plasma firing mechanism of SCB was analyzed. Results indicate that the function time and the energy required decrease significantly for SCB firing with the V-type angle on the SCB decreasing, while the holes have a little effect on the explosive performance of SCB.
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