CAJ | 학술논문

为了定量地得到磁场梯度对a-Si∶H薄膜沉积速率的影响,对单磁场线圈分散场MWECR CVD系统等离子体室和沉积室中用三种方法得到的磁场形貌进行了研究.通过洛伦兹拟合的方法定量地得到了这些磁场形貌的磁场梯度.结果表明,样品台下面放置钐钴永磁体并使磁场线圈电流为137.7A时其衬底附近磁场梯度值最大,样品台下面无钐钴永磁时,磁场线圈电流分别为137.7A和115.2A的磁场梯度值依次为次之和最小.制备a-Si∶H薄膜时,在衬底附近具有高的磁场梯度值可以得到高的沉积速率.通过红外吸收谱技术分析,虽然样品台下面放置钐钴永磁体并使磁场线圈电流为137.7A下能得到最大的沉积速率,但是沿样品台半径方向沉积速率呈现很明显的不均匀分布.
위료정량지득도자장제도대a-Si∶H박막침적속솔적영향,대단자장선권분산장MWECR CVD계통등리자체실화침적실중용삼충방법득도적자장형모진행료연구.통과락륜자의합적방법정량지득도료저사자장형모적자장제도.결과표명,양품태하면방치삼고영자체병사자장선권전류위137.7A시기츤저부근자장제도치최대,양품태하면무삼고영자시,자장선권전류분별위137.7A화115.2A적자장제도치의차위차지화최소.제비a-Si∶H박막시,재츤저부근구유고적자장제도치가이득도고적침적속솔.통과홍외흡수보기술분석,수연양품태하면방치삼고영자체병사자장선권전류위137.7A하능득도최대적침적속솔,단시연양품태반경방향침적속솔정현흔명현적불균균분포.
The magnetic field profiles,which are produced by three ways in the deposition chamber and plasma chamber of single coil divergent field MWECR CVD system,are investigated.The magnetic field gradient of these magnetic field profiles is obtained quantitatively by using Lorentz fit.The results indicate that the gradient value of the magnetic field profile near by the substrate,which is produced by a coil current with 137.7A if a SmCo permanent magnet is equipped under the substrate holder,is the largest;when the SmCo permanent magnet is taken away,the larger one is produced by the coil current with 137.7A and the smallest one produced by a coil current with 115.2A.High deposition rate of a-Si∶H film is observed near by the substrate with high magnetic field gradient.But uneven deposition rate along the radius of the sample holder is also found by infrared analysis technology when sample is deposited in magnetic field profile,which is produced by the coil current with 137.7A if the SmCo permanent magnet is equipped under the substrate holder.