红外与激光工程
紅外與激光工程
홍외여격광공정
INFRARED AND LASER ENGINEERING
2009年
6期
951-956
,共6页
李永富%唐恒敬%李淘%朱耀明%汪洋%殷豪%李天信%缪国庆%李雪%龚海梅
李永富%唐恆敬%李淘%硃耀明%汪洋%慇豪%李天信%繆國慶%李雪%龔海梅
리영부%당항경%리도%주요명%왕양%은호%리천신%무국경%리설%공해매
二次离子质谱%扫描电容显微技术%Zn扩散
二次離子質譜%掃描電容顯微技術%Zn擴散
이차리자질보%소묘전용현미기술%Zn확산
Secondary ion mass spectroscopy (SIMS)%Scanning capacitance microscopy (SCM)%Zn diffusion
采用闭管扩散方式实现了Zn元素在晶格匹配InP/In_(0.53)Ga_(0.47)As及晶格失配InP/In_(0.82)Ga_(0.18)AS两种异质结构材料中的P型掺杂,利用二次离子质谱(SIMS)以及扫描电容显微技术(SCM)对Zn在两种材料中的扩散机制进行了研究.SIMS测试表明:Zn元素在晶格失配材料中的扩散速度远大于在晶格匹配材料中的扩散速度,而SCM测试表明:两种材料中的实际PN结深度与SIMS测得的Zn扩散深度之间存在一定的差值,这是由于扩散进入材料中的Zn元素并没有被完全激活,而晶格失配材料中Zn的激活效率相对更低,使得晶格失配材料中Zn元素扩散深度与PN结深度的差值更大.SCM法是一种新颖快捷的半导体结深测试法,对于半导体器件工艺研究具有重要的指导意义.
採用閉管擴散方式實現瞭Zn元素在晶格匹配InP/In_(0.53)Ga_(0.47)As及晶格失配InP/In_(0.82)Ga_(0.18)AS兩種異質結構材料中的P型摻雜,利用二次離子質譜(SIMS)以及掃描電容顯微技術(SCM)對Zn在兩種材料中的擴散機製進行瞭研究.SIMS測試錶明:Zn元素在晶格失配材料中的擴散速度遠大于在晶格匹配材料中的擴散速度,而SCM測試錶明:兩種材料中的實際PN結深度與SIMS測得的Zn擴散深度之間存在一定的差值,這是由于擴散進入材料中的Zn元素併沒有被完全激活,而晶格失配材料中Zn的激活效率相對更低,使得晶格失配材料中Zn元素擴散深度與PN結深度的差值更大.SCM法是一種新穎快捷的半導體結深測試法,對于半導體器件工藝研究具有重要的指導意義.
채용폐관확산방식실현료Zn원소재정격필배InP/In_(0.53)Ga_(0.47)As급정격실배InP/In_(0.82)Ga_(0.18)AS량충이질결구재료중적P형참잡,이용이차리자질보(SIMS)이급소묘전용현미기술(SCM)대Zn재량충재료중적확산궤제진행료연구.SIMS측시표명:Zn원소재정격실배재료중적확산속도원대우재정격필배재료중적확산속도,이SCM측시표명:량충재료중적실제PN결심도여SIMS측득적Zn확산심도지간존재일정적차치,저시유우확산진입재료중적Zn원소병몰유피완전격활,이정격실배재료중Zn적격활효솔상대경저,사득정격실배재료중Zn원소확산심도여PN결심도적차치경대.SCM법시일충신영쾌첩적반도체결심측시법,대우반도체기건공예연구구유중요적지도의의.
Zn diffusion experiments were carried out for the lattice-matched InP/In_(0.53)Ga_(0.47)TAs and the lattice-mismatched InP/In_(0.82)Ga_(0.18)As hetero structures using the closed tube diffusion. Secondary ion mass spectroscopy (SIMS) and scanning capacitance microscopy (SCM) techniques were used to study the diffusion mechanism of Zn in the two samples. The SIMS measurement results show that Zn has a larger diffusion velocity in the lattice-mismatched samples than in the lattice-matched samples. However, there were differences between the Zn diffusion depth measured by SIMS and PN junction depth measured by SCM in both materials. The reason is that the diffused Zn in these structures isn't completely activated. And in the lattice-mismatched sample Zn has an even smaller activation ratio, thus the difference between Zn diffusion depth and PN junction depth is even greater. These results show that the SCM technique is a novel and quick measurement method of junction depth, it is guidance for the research of semiconductor device process.
